Phase-field simulation of domain structures in epitaxial BiFeO3 films on vicinal substrates

B. Winchester, P. Wu, L. Q. Chen

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Abstract

The ferroelectric domain structures of epitaxial BiFeO3 thin films on miscut substrates were studied using a phase-field model. The effects of substrate vicinality towards (100) are considered by assuming charge-compensated surface and film/substrate interface. The predicted domain structures show remarkable agreement with existing experimental observations, including domain wall orientations and local topological domain configurations. The roles of elastic, electric, and gradient energies on the domain structures were analyzed. It is shown that the substrate strain anisotropy due to the miscut largely determines the domain variant selection and domain configurations.

Original languageEnglish (US)
Article number052903
JournalApplied Physics Letters
Volume99
Issue number5
DOIs
StatePublished - Aug 1 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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