The phase-field approach is used to predict the effect of thickness on domain stability in ferroelectric thin films. The mechanism of strain relaxation and the critical thickness for dislocation formation from both the Matthews-Blakeslee and People-Bean models are employed. Thickness-strain domain stability diagrams are obtained for PbTiO 3 thin films for different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experimental measurements in PbTiO 3 thin films grown on SrTiO 3 and KTaO 3 substrates.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys