Phase-field simulations of thickness-dependent domain stability in PbTiO 3 thin films

G. Sheng, Jiamian Hu, J. X. Zhang, Y. L. Li, Zi-kui Liu, Long-qing Chen

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The phase-field approach is used to predict the effect of thickness on domain stability in ferroelectric thin films. The mechanism of strain relaxation and the critical thickness for dislocation formation from both the Matthews-Blakeslee and People-Bean models are employed. Thickness-strain domain stability diagrams are obtained for PbTiO 3 thin films for different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experimental measurements in PbTiO 3 thin films grown on SrTiO 3 and KTaO 3 substrates.

Original languageEnglish (US)
Pages (from-to)3296-3301
Number of pages6
JournalActa Materialia
Volume60
Issue number8
DOIs
StatePublished - May 1 2012

Fingerprint

Strain relaxation
Thin films
Ferroelectric thin films
Film thickness
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Cite this

Sheng, G. ; Hu, Jiamian ; Zhang, J. X. ; Li, Y. L. ; Liu, Zi-kui ; Chen, Long-qing. / Phase-field simulations of thickness-dependent domain stability in PbTiO 3 thin films. In: Acta Materialia. 2012 ; Vol. 60, No. 8. pp. 3296-3301.
@article{fb8231ea72e44a5d8ce97d8c24713edd,
title = "Phase-field simulations of thickness-dependent domain stability in PbTiO 3 thin films",
abstract = "The phase-field approach is used to predict the effect of thickness on domain stability in ferroelectric thin films. The mechanism of strain relaxation and the critical thickness for dislocation formation from both the Matthews-Blakeslee and People-Bean models are employed. Thickness-strain domain stability diagrams are obtained for PbTiO 3 thin films for different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experimental measurements in PbTiO 3 thin films grown on SrTiO 3 and KTaO 3 substrates.",
author = "G. Sheng and Jiamian Hu and Zhang, {J. X.} and Li, {Y. L.} and Zi-kui Liu and Long-qing Chen",
year = "2012",
month = "5",
day = "1",
doi = "10.1016/j.actamat.2012.03.003",
language = "English (US)",
volume = "60",
pages = "3296--3301",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",
number = "8",

}

Phase-field simulations of thickness-dependent domain stability in PbTiO 3 thin films. / Sheng, G.; Hu, Jiamian; Zhang, J. X.; Li, Y. L.; Liu, Zi-kui; Chen, Long-qing.

In: Acta Materialia, Vol. 60, No. 8, 01.05.2012, p. 3296-3301.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase-field simulations of thickness-dependent domain stability in PbTiO 3 thin films

AU - Sheng, G.

AU - Hu, Jiamian

AU - Zhang, J. X.

AU - Li, Y. L.

AU - Liu, Zi-kui

AU - Chen, Long-qing

PY - 2012/5/1

Y1 - 2012/5/1

N2 - The phase-field approach is used to predict the effect of thickness on domain stability in ferroelectric thin films. The mechanism of strain relaxation and the critical thickness for dislocation formation from both the Matthews-Blakeslee and People-Bean models are employed. Thickness-strain domain stability diagrams are obtained for PbTiO 3 thin films for different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experimental measurements in PbTiO 3 thin films grown on SrTiO 3 and KTaO 3 substrates.

AB - The phase-field approach is used to predict the effect of thickness on domain stability in ferroelectric thin films. The mechanism of strain relaxation and the critical thickness for dislocation formation from both the Matthews-Blakeslee and People-Bean models are employed. Thickness-strain domain stability diagrams are obtained for PbTiO 3 thin films for different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experimental measurements in PbTiO 3 thin films grown on SrTiO 3 and KTaO 3 substrates.

UR - http://www.scopus.com/inward/record.url?scp=84859398659&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859398659&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2012.03.003

DO - 10.1016/j.actamat.2012.03.003

M3 - Article

AN - SCOPUS:84859398659

VL - 60

SP - 3296

EP - 3301

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

IS - 8

ER -