Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride

H. S. Venugopalan, Suzanne E. Mohney, B. P. Luther, J. M. Delucca, S. D. Wolter, Joan Marie Redwing, G. E. Bulman

Research output: Contribution to journalConference article

19 Scopus citations

Abstract

Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900°C in N2, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni-Ga-N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.

Original languageEnglish (US)
Pages (from-to)431-436
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume468
StatePublished - Jan 1 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 3 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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