Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns

Rona E. Banai, Hyeonseok Lee, Sivan Zlotnikov, Jeffrey Brownson, Mark William Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Tin monosulfide (SnS) is a promising material for a photovoltaic absorber layer. Significant strides have been taken to better understand its material properties. The X-ray diffraction patterns of radio-frequency sputtered SnS thin films are investigated. Samples were deposited under varying total pressure, target power, substrate-to-target distance, and substrate temperature. Rietveld refinement of samples deposited under varying conditions yielded evidence of multiple phases present in SnS thin films. Refinements were completed with one or more tin sulfide phases, showing a dominant herzenbergite SnS phase (Pbnm). Possible secondary phases include orthrhombic (Cmcm) and cubic (Fm3m) crystal structures. Lattice parameters, cell volume, and unit cell density were investigated as a function of deposition conditions. Results indicate that growth mode is related to deposition rate. Early studies of heated stage depositions showed that SnS thin films have added mobility at the substrate.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2562-2566
Number of pages5
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Rietveld analysis
Diffraction patterns
X ray diffraction
Thin films
Tin
Substrates
Rietveld refinement
Deposition rates
Lattice constants
Materials properties
Crystal structure
Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Banai, R. E., Lee, H., Zlotnikov, S., Brownson, J., & Horn, M. W. (2013). Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2562-2566). [6744997] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744997
Banai, Rona E. ; Lee, Hyeonseok ; Zlotnikov, Sivan ; Brownson, Jeffrey ; Horn, Mark William. / Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2562-2566
@inproceedings{2ff7967a5f9d4f3e898e39e9ad6e62ba,
title = "Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns",
abstract = "Tin monosulfide (SnS) is a promising material for a photovoltaic absorber layer. Significant strides have been taken to better understand its material properties. The X-ray diffraction patterns of radio-frequency sputtered SnS thin films are investigated. Samples were deposited under varying total pressure, target power, substrate-to-target distance, and substrate temperature. Rietveld refinement of samples deposited under varying conditions yielded evidence of multiple phases present in SnS thin films. Refinements were completed with one or more tin sulfide phases, showing a dominant herzenbergite SnS phase (Pbnm). Possible secondary phases include orthrhombic (Cmcm) and cubic (Fm3m) crystal structures. Lattice parameters, cell volume, and unit cell density were investigated as a function of deposition conditions. Results indicate that growth mode is related to deposition rate. Early studies of heated stage depositions showed that SnS thin films have added mobility at the substrate.",
author = "Banai, {Rona E.} and Hyeonseok Lee and Sivan Zlotnikov and Jeffrey Brownson and Horn, {Mark William}",
year = "2013",
month = "1",
day = "1",
doi = "10.1109/PVSC.2013.6744997",
language = "English (US)",
isbn = "9781479932993",
pages = "2562--2566",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Banai, RE, Lee, H, Zlotnikov, S, Brownson, J & Horn, MW 2013, Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744997, Institute of Electrical and Electronics Engineers Inc., pp. 2562-2566, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744997

Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns. / Banai, Rona E.; Lee, Hyeonseok; Zlotnikov, Sivan; Brownson, Jeffrey; Horn, Mark William.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2562-2566 6744997.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns

AU - Banai, Rona E.

AU - Lee, Hyeonseok

AU - Zlotnikov, Sivan

AU - Brownson, Jeffrey

AU - Horn, Mark William

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Tin monosulfide (SnS) is a promising material for a photovoltaic absorber layer. Significant strides have been taken to better understand its material properties. The X-ray diffraction patterns of radio-frequency sputtered SnS thin films are investigated. Samples were deposited under varying total pressure, target power, substrate-to-target distance, and substrate temperature. Rietveld refinement of samples deposited under varying conditions yielded evidence of multiple phases present in SnS thin films. Refinements were completed with one or more tin sulfide phases, showing a dominant herzenbergite SnS phase (Pbnm). Possible secondary phases include orthrhombic (Cmcm) and cubic (Fm3m) crystal structures. Lattice parameters, cell volume, and unit cell density were investigated as a function of deposition conditions. Results indicate that growth mode is related to deposition rate. Early studies of heated stage depositions showed that SnS thin films have added mobility at the substrate.

AB - Tin monosulfide (SnS) is a promising material for a photovoltaic absorber layer. Significant strides have been taken to better understand its material properties. The X-ray diffraction patterns of radio-frequency sputtered SnS thin films are investigated. Samples were deposited under varying total pressure, target power, substrate-to-target distance, and substrate temperature. Rietveld refinement of samples deposited under varying conditions yielded evidence of multiple phases present in SnS thin films. Refinements were completed with one or more tin sulfide phases, showing a dominant herzenbergite SnS phase (Pbnm). Possible secondary phases include orthrhombic (Cmcm) and cubic (Fm3m) crystal structures. Lattice parameters, cell volume, and unit cell density were investigated as a function of deposition conditions. Results indicate that growth mode is related to deposition rate. Early studies of heated stage depositions showed that SnS thin films have added mobility at the substrate.

UR - http://www.scopus.com/inward/record.url?scp=84896474174&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896474174&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744997

DO - 10.1109/PVSC.2013.6744997

M3 - Conference contribution

AN - SCOPUS:84896474174

SN - 9781479932993

SP - 2562

EP - 2566

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Banai RE, Lee H, Zlotnikov S, Brownson J, Horn MW. Phase identification of RF-sputtered SnS thin films using rietveld analysis of X-ray diffraction patterns. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2562-2566. 6744997 https://doi.org/10.1109/PVSC.2013.6744997