Phase stabilization of VO2 thin films in high vacuum

Hai Tian Zhang, Craig Eaton, Hansheng Ye, Roman Engel-Herbert

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A new growth approach to stabilize VO2 on Al2O3 in high vacuum is reported by reducing vanadium oxytriisopropoxide (VTIP) with vanadium metal. Phase stabilization and surface wetting behavior were studied as a function of growth parameters. The flux balance of VTIP to V in combination with growth temperature was identified to be critical for the growth of high quality VO2 thin films. High V fluxes were required to suppress the island formation and to ensure a coalesced film, while too high V fluxes ultimately favored the formation of the undesired, epitaxially stabilized V2O3 phase. Careful optimization of growth temperature, VTIP to V ratio, and growth rate led to high quality single phase VO2 thin films with >3.5 orders of magnitude change in resistivity across the metal-to-insulator transition. This approach opens up another synthesis avenue to stabilize oxide thin films into desired phases.

Original languageEnglish (US)
Article number185306
JournalJournal of Applied Physics
Volume118
Issue number18
DOIs
StatePublished - Nov 14 2015

Fingerprint

high vacuum
stabilization
thin films
vanadium
metals
wetting
insulators
electrical resistivity
optimization
temperature
oxides
synthesis

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Zhang, Hai Tian ; Eaton, Craig ; Ye, Hansheng ; Engel-Herbert, Roman. / Phase stabilization of VO2 thin films in high vacuum. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 18.
@article{60fd3f75b8cd4f61a44ed9686f2a25ca,
title = "Phase stabilization of VO2 thin films in high vacuum",
abstract = "A new growth approach to stabilize VO2 on Al2O3 in high vacuum is reported by reducing vanadium oxytriisopropoxide (VTIP) with vanadium metal. Phase stabilization and surface wetting behavior were studied as a function of growth parameters. The flux balance of VTIP to V in combination with growth temperature was identified to be critical for the growth of high quality VO2 thin films. High V fluxes were required to suppress the island formation and to ensure a coalesced film, while too high V fluxes ultimately favored the formation of the undesired, epitaxially stabilized V2O3 phase. Careful optimization of growth temperature, VTIP to V ratio, and growth rate led to high quality single phase VO2 thin films with >3.5 orders of magnitude change in resistivity across the metal-to-insulator transition. This approach opens up another synthesis avenue to stabilize oxide thin films into desired phases.",
author = "Zhang, {Hai Tian} and Craig Eaton and Hansheng Ye and Roman Engel-Herbert",
year = "2015",
month = "11",
day = "14",
doi = "10.1063/1.4935268",
language = "English (US)",
volume = "118",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

Phase stabilization of VO2 thin films in high vacuum. / Zhang, Hai Tian; Eaton, Craig; Ye, Hansheng; Engel-Herbert, Roman.

In: Journal of Applied Physics, Vol. 118, No. 18, 185306, 14.11.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase stabilization of VO2 thin films in high vacuum

AU - Zhang, Hai Tian

AU - Eaton, Craig

AU - Ye, Hansheng

AU - Engel-Herbert, Roman

PY - 2015/11/14

Y1 - 2015/11/14

N2 - A new growth approach to stabilize VO2 on Al2O3 in high vacuum is reported by reducing vanadium oxytriisopropoxide (VTIP) with vanadium metal. Phase stabilization and surface wetting behavior were studied as a function of growth parameters. The flux balance of VTIP to V in combination with growth temperature was identified to be critical for the growth of high quality VO2 thin films. High V fluxes were required to suppress the island formation and to ensure a coalesced film, while too high V fluxes ultimately favored the formation of the undesired, epitaxially stabilized V2O3 phase. Careful optimization of growth temperature, VTIP to V ratio, and growth rate led to high quality single phase VO2 thin films with >3.5 orders of magnitude change in resistivity across the metal-to-insulator transition. This approach opens up another synthesis avenue to stabilize oxide thin films into desired phases.

AB - A new growth approach to stabilize VO2 on Al2O3 in high vacuum is reported by reducing vanadium oxytriisopropoxide (VTIP) with vanadium metal. Phase stabilization and surface wetting behavior were studied as a function of growth parameters. The flux balance of VTIP to V in combination with growth temperature was identified to be critical for the growth of high quality VO2 thin films. High V fluxes were required to suppress the island formation and to ensure a coalesced film, while too high V fluxes ultimately favored the formation of the undesired, epitaxially stabilized V2O3 phase. Careful optimization of growth temperature, VTIP to V ratio, and growth rate led to high quality single phase VO2 thin films with >3.5 orders of magnitude change in resistivity across the metal-to-insulator transition. This approach opens up another synthesis avenue to stabilize oxide thin films into desired phases.

UR - http://www.scopus.com/inward/record.url?scp=84947207941&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947207941&partnerID=8YFLogxK

U2 - 10.1063/1.4935268

DO - 10.1063/1.4935268

M3 - Article

AN - SCOPUS:84947207941

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 18

M1 - 185306

ER -