Phase stabilization of VO2 thin films in high vacuum

Hai Tian Zhang, Craig Eaton, Hansheng Ye, Roman Engel-Herbert

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

A new growth approach to stabilize VO2 on Al2O3 in high vacuum is reported by reducing vanadium oxytriisopropoxide (VTIP) with vanadium metal. Phase stabilization and surface wetting behavior were studied as a function of growth parameters. The flux balance of VTIP to V in combination with growth temperature was identified to be critical for the growth of high quality VO2 thin films. High V fluxes were required to suppress the island formation and to ensure a coalesced film, while too high V fluxes ultimately favored the formation of the undesired, epitaxially stabilized V2O3 phase. Careful optimization of growth temperature, VTIP to V ratio, and growth rate led to high quality single phase VO2 thin films with >3.5 orders of magnitude change in resistivity across the metal-to-insulator transition. This approach opens up another synthesis avenue to stabilize oxide thin films into desired phases.

Original languageEnglish (US)
Article number185306
JournalJournal of Applied Physics
Volume118
Issue number18
DOIs
StatePublished - Nov 14 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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