Phase structure, microstructure, and electrical properties of Sb-modified (K, Na, Li) (Nb, Ta) O3 Piezoelectric Ceramics

Yunfei Chang, Zupei Yang, Lirong Xiong, Zonghuai Liu, Zenglin Wang

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Lead-free (K0.44Na0.52Li0.04)(Nb 0.80-xTa0.20Sbx)O3 piezoelectric ceramics were prepared by the ordinary sintering method. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.00 to 0.06, the phase structure of the ceramics changed from the tetragonal to the pseudocubic phase, and both the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb5+ for Nb5+. By increasing x, the dielectric properties were optimized and the variation of dielectric constants before and after poling became smaller. Only the tetragonal-cubic phase transition was observed above room temperature in all the er-T curves. The degree of diffuseness increased from 1.29 at x50.00 to 1.96 at x50.06, indicating that the ceramics at x50.06 changed to an approximate ideal relaxor ferroelectric. The temperature dependences of fr and kp became better by increasing x properly. Significantly, the ceramics with x between 0.00 and 0.04 had high density and outstanding electrical properties (d33=241-272pC/N, kp=0.42-0.52, eτ51258- 1591, tan δ=0.015-0.025, Tc=2801-355°, E c510.62-12.60 kV/ cm, and Pr516.19-20.13 μC/cm2). Besides, the underlying mechanism for variations of the electrical properties due to Sb 5+ substitution was explained in this work.

Original languageEnglish (US)
Pages (from-to)2211-2216
Number of pages6
JournalJournal of the American Ceramic Society
Volume91
Issue number7
DOIs
StatePublished - Jul 1 2008

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Piezoelectric ceramics
Phase structure
Electric properties
Electronegativity
Microstructure
Grain growth
Dielectric properties
Ferroelectric materials
Raman scattering
Permittivity
Substitution reactions
Sintering
Lead
Phase transitions
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Chang, Yunfei ; Yang, Zupei ; Xiong, Lirong ; Liu, Zonghuai ; Wang, Zenglin. / Phase structure, microstructure, and electrical properties of Sb-modified (K, Na, Li) (Nb, Ta) O3 Piezoelectric Ceramics. In: Journal of the American Ceramic Society. 2008 ; Vol. 91, No. 7. pp. 2211-2216.
@article{68ad547937184e1397e3c8931e49a361,
title = "Phase structure, microstructure, and electrical properties of Sb-modified (K, Na, Li) (Nb, Ta) O3 Piezoelectric Ceramics",
abstract = "Lead-free (K0.44Na0.52Li0.04)(Nb 0.80-xTa0.20Sbx)O3 piezoelectric ceramics were prepared by the ordinary sintering method. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.00 to 0.06, the phase structure of the ceramics changed from the tetragonal to the pseudocubic phase, and both the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb5+ for Nb5+. By increasing x, the dielectric properties were optimized and the variation of dielectric constants before and after poling became smaller. Only the tetragonal-cubic phase transition was observed above room temperature in all the er-T curves. The degree of diffuseness increased from 1.29 at x50.00 to 1.96 at x50.06, indicating that the ceramics at x50.06 changed to an approximate ideal relaxor ferroelectric. The temperature dependences of fr and kp became better by increasing x properly. Significantly, the ceramics with x between 0.00 and 0.04 had high density and outstanding electrical properties (d33=241-272pC/N, kp=0.42-0.52, eτ51258- 1591, tan δ=0.015-0.025, Tc=2801-355°, E c510.62-12.60 kV/ cm, and Pr516.19-20.13 μC/cm2). Besides, the underlying mechanism for variations of the electrical properties due to Sb 5+ substitution was explained in this work.",
author = "Yunfei Chang and Zupei Yang and Lirong Xiong and Zonghuai Liu and Zenglin Wang",
year = "2008",
month = "7",
day = "1",
doi = "10.1111/j.1551-2916.2008.02444.x",
language = "English (US)",
volume = "91",
pages = "2211--2216",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "7",

}

Phase structure, microstructure, and electrical properties of Sb-modified (K, Na, Li) (Nb, Ta) O3 Piezoelectric Ceramics. / Chang, Yunfei; Yang, Zupei; Xiong, Lirong; Liu, Zonghuai; Wang, Zenglin.

In: Journal of the American Ceramic Society, Vol. 91, No. 7, 01.07.2008, p. 2211-2216.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase structure, microstructure, and electrical properties of Sb-modified (K, Na, Li) (Nb, Ta) O3 Piezoelectric Ceramics

AU - Chang, Yunfei

AU - Yang, Zupei

AU - Xiong, Lirong

AU - Liu, Zonghuai

AU - Wang, Zenglin

PY - 2008/7/1

Y1 - 2008/7/1

N2 - Lead-free (K0.44Na0.52Li0.04)(Nb 0.80-xTa0.20Sbx)O3 piezoelectric ceramics were prepared by the ordinary sintering method. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.00 to 0.06, the phase structure of the ceramics changed from the tetragonal to the pseudocubic phase, and both the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb5+ for Nb5+. By increasing x, the dielectric properties were optimized and the variation of dielectric constants before and after poling became smaller. Only the tetragonal-cubic phase transition was observed above room temperature in all the er-T curves. The degree of diffuseness increased from 1.29 at x50.00 to 1.96 at x50.06, indicating that the ceramics at x50.06 changed to an approximate ideal relaxor ferroelectric. The temperature dependences of fr and kp became better by increasing x properly. Significantly, the ceramics with x between 0.00 and 0.04 had high density and outstanding electrical properties (d33=241-272pC/N, kp=0.42-0.52, eτ51258- 1591, tan δ=0.015-0.025, Tc=2801-355°, E c510.62-12.60 kV/ cm, and Pr516.19-20.13 μC/cm2). Besides, the underlying mechanism for variations of the electrical properties due to Sb 5+ substitution was explained in this work.

AB - Lead-free (K0.44Na0.52Li0.04)(Nb 0.80-xTa0.20Sbx)O3 piezoelectric ceramics were prepared by the ordinary sintering method. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.00 to 0.06, the phase structure of the ceramics changed from the tetragonal to the pseudocubic phase, and both the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb5+ for Nb5+. By increasing x, the dielectric properties were optimized and the variation of dielectric constants before and after poling became smaller. Only the tetragonal-cubic phase transition was observed above room temperature in all the er-T curves. The degree of diffuseness increased from 1.29 at x50.00 to 1.96 at x50.06, indicating that the ceramics at x50.06 changed to an approximate ideal relaxor ferroelectric. The temperature dependences of fr and kp became better by increasing x properly. Significantly, the ceramics with x between 0.00 and 0.04 had high density and outstanding electrical properties (d33=241-272pC/N, kp=0.42-0.52, eτ51258- 1591, tan δ=0.015-0.025, Tc=2801-355°, E c510.62-12.60 kV/ cm, and Pr516.19-20.13 μC/cm2). Besides, the underlying mechanism for variations of the electrical properties due to Sb 5+ substitution was explained in this work.

UR - http://www.scopus.com/inward/record.url?scp=58149328273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149328273&partnerID=8YFLogxK

U2 - 10.1111/j.1551-2916.2008.02444.x

DO - 10.1111/j.1551-2916.2008.02444.x

M3 - Article

AN - SCOPUS:58149328273

VL - 91

SP - 2211

EP - 2216

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 7

ER -