Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current

J. Frougier, N. Shukla, D. Deng, M. Jerry, A. Aziz, L. Liu, Guy Lavallee, T. S. Mayer, Sumeet Kumar Gupta, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

Vanadium dioxide (VO2), which exhibits electrically induced abrupt insulator-To-metal phase transition (IMT), is monolithically integrated with Silicon MOSFET to demonstrate a steep-slope (sub-kT/q) Phase-Transition FET (Phase-FET). The Phase-FET exhibits switching-slope (SS) of 8mV/decade leading to 36% increase in ON current (ION) over baseline MOSFET. We analyze the electrical characteristics of several threshold-switching materials with enhanced resistivity ratios (>105) beyond VO2 and harness them to enhance the performance of 14nm node FinFETs. Our analysis shows that up to 2.9× increase in ION, and 1.86× reduction in energy at (iso-delay) for an 11 stage ring oscillator (RO) is achievable with Phase FETs using Cu-doped HfO2 threshold switches.

Original languageEnglish (US)
Title of host publication2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006373
DOIs
StatePublished - Sep 21 2016
Event36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States
Duration: Jun 13 2016Jun 16 2016

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2016-September
ISSN (Print)0743-1562

Other

Other36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
CountryUnited States
CityHonolulu
Period6/13/166/16/16

Fingerprint

Field effect transistors
Phase transitions
Vanadium
Switches
Silicon
Metals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Frougier, J., Shukla, N., Deng, D., Jerry, M., Aziz, A., Liu, L., ... Datta, S. (2016). Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 [7573445] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2016.7573445
Frougier, J. ; Shukla, N. ; Deng, D. ; Jerry, M. ; Aziz, A. ; Liu, L. ; Lavallee, Guy ; Mayer, T. S. ; Gupta, Sumeet Kumar ; Datta, S. / Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Digest of Technical Papers - Symposium on VLSI Technology).
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title = "Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36{\%} enhanced on current",
abstract = "Vanadium dioxide (VO2), which exhibits electrically induced abrupt insulator-To-metal phase transition (IMT), is monolithically integrated with Silicon MOSFET to demonstrate a steep-slope (sub-kT/q) Phase-Transition FET (Phase-FET). The Phase-FET exhibits switching-slope (SS) of 8mV/decade leading to 36{\%} increase in ON current (ION) over baseline MOSFET. We analyze the electrical characteristics of several threshold-switching materials with enhanced resistivity ratios (>105) beyond VO2 and harness them to enhance the performance of 14nm node FinFETs. Our analysis shows that up to 2.9× increase in ION, and 1.86× reduction in energy at (iso-delay) for an 11 stage ring oscillator (RO) is achievable with Phase FETs using Cu-doped HfO2 threshold switches.",
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Frougier, J, Shukla, N, Deng, D, Jerry, M, Aziz, A, Liu, L, Lavallee, G, Mayer, TS, Gupta, SK & Datta, S 2016, Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. in 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016., 7573445, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, Honolulu, United States, 6/13/16. https://doi.org/10.1109/VLSIT.2016.7573445

Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. / Frougier, J.; Shukla, N.; Deng, D.; Jerry, M.; Aziz, A.; Liu, L.; Lavallee, Guy; Mayer, T. S.; Gupta, Sumeet Kumar; Datta, S.

2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7573445 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Frougier J, Shukla N, Deng D, Jerry M, Aziz A, Liu L et al. Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced on current. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7573445. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2016.7573445