Phase transition, Raman spectra, infrared spectra, band gap and microwave dielectric properties of low temperature firing (Na 0.5x Bi 1-0.5x )(Mo x V 1-x )O 4 solid solution ceramics with scheelite structures

Di Zhou, Li Xia Pang, Hong Wang, Jing Guo, Xi Yao, Clive A. Randall

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Abstract

A scheelite based structure that could host the solid solution (Na 0.5x Bi 1-0.5x )(Mo x V 1-x )O 4 (0.0 ≤ x ≤ 1.0) was prepared via the solid state reaction method. All the compositions can be sintered well below a temperature of 800 °C. A structural phase transition occurs from the monoclinic scheelite structure to a tetragonal scheelite structure at x = 0.10 at room temperature. This structural transition is related to a displacive ferroelastic-paraelastic phase transition. This phase transition was also confirmed by in situ high temperature XRD and Raman studies, and a room temperature infrared spectra study. The compositions near the phase boundary possessed high dielectric permittivities (>70), and large Qf values (>80000 GHz) with variable temperature coefficients of frequency and capacitance. For example, a temperature stable dielectric made as a composite with compositions of x = 0.05 and x = 0.10 was designed and co-sintered at 720 °C for 2 h to produce a dielectric with a permittivity of ∼77.3, a Qf value between 8000 GHz-10000 GHz, and a temperature coefficient of <±20 ppm/°C at 3.8 GHz over a temperature range of 25-110 °C. This material is a candidate for dielectric resonators and low temperature co-fired ceramics technologies. Near the phase boundary at x = 0.10 in the monoclinic phase region, the samples show strong absorption in the visible light region and we determine a band gap energy of about 2.1 eV, which means that it might also be useful as a visible light irradiation photocatalyst.

Original languageEnglish (US)
Pages (from-to)18412-18420
Number of pages9
JournalJournal of Materials Chemistry
Volume21
Issue number45
DOIs
StatePublished - Dec 7 2011

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Dielectric properties
Raman scattering
Solid solutions
Energy gap
Phase transitions
Microwaves
Infrared radiation
Temperature
Phase boundaries
Permittivity
Chemical analysis
Dielectric resonators
Photocatalysts
Solid state reactions
Capacitance
Irradiation
Composite materials

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

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title = "Phase transition, Raman spectra, infrared spectra, band gap and microwave dielectric properties of low temperature firing (Na 0.5x Bi 1-0.5x )(Mo x V 1-x )O 4 solid solution ceramics with scheelite structures",
abstract = "A scheelite based structure that could host the solid solution (Na 0.5x Bi 1-0.5x )(Mo x V 1-x )O 4 (0.0 ≤ x ≤ 1.0) was prepared via the solid state reaction method. All the compositions can be sintered well below a temperature of 800 °C. A structural phase transition occurs from the monoclinic scheelite structure to a tetragonal scheelite structure at x = 0.10 at room temperature. This structural transition is related to a displacive ferroelastic-paraelastic phase transition. This phase transition was also confirmed by in situ high temperature XRD and Raman studies, and a room temperature infrared spectra study. The compositions near the phase boundary possessed high dielectric permittivities (>70), and large Qf values (>80000 GHz) with variable temperature coefficients of frequency and capacitance. For example, a temperature stable dielectric made as a composite with compositions of x = 0.05 and x = 0.10 was designed and co-sintered at 720 °C for 2 h to produce a dielectric with a permittivity of ∼77.3, a Qf value between 8000 GHz-10000 GHz, and a temperature coefficient of <±20 ppm/°C at 3.8 GHz over a temperature range of 25-110 °C. This material is a candidate for dielectric resonators and low temperature co-fired ceramics technologies. Near the phase boundary at x = 0.10 in the monoclinic phase region, the samples show strong absorption in the visible light region and we determine a band gap energy of about 2.1 eV, which means that it might also be useful as a visible light irradiation photocatalyst.",
author = "Di Zhou and Pang, {Li Xia} and Hong Wang and Jing Guo and Xi Yao and Randall, {Clive A.}",
year = "2011",
month = "12",
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T1 - Phase transition, Raman spectra, infrared spectra, band gap and microwave dielectric properties of low temperature firing (Na 0.5x Bi 1-0.5x )(Mo x V 1-x )O 4 solid solution ceramics with scheelite structures

AU - Zhou, Di

AU - Pang, Li Xia

AU - Wang, Hong

AU - Guo, Jing

AU - Yao, Xi

AU - Randall, Clive A.

PY - 2011/12/7

Y1 - 2011/12/7

N2 - A scheelite based structure that could host the solid solution (Na 0.5x Bi 1-0.5x )(Mo x V 1-x )O 4 (0.0 ≤ x ≤ 1.0) was prepared via the solid state reaction method. All the compositions can be sintered well below a temperature of 800 °C. A structural phase transition occurs from the monoclinic scheelite structure to a tetragonal scheelite structure at x = 0.10 at room temperature. This structural transition is related to a displacive ferroelastic-paraelastic phase transition. This phase transition was also confirmed by in situ high temperature XRD and Raman studies, and a room temperature infrared spectra study. The compositions near the phase boundary possessed high dielectric permittivities (>70), and large Qf values (>80000 GHz) with variable temperature coefficients of frequency and capacitance. For example, a temperature stable dielectric made as a composite with compositions of x = 0.05 and x = 0.10 was designed and co-sintered at 720 °C for 2 h to produce a dielectric with a permittivity of ∼77.3, a Qf value between 8000 GHz-10000 GHz, and a temperature coefficient of <±20 ppm/°C at 3.8 GHz over a temperature range of 25-110 °C. This material is a candidate for dielectric resonators and low temperature co-fired ceramics technologies. Near the phase boundary at x = 0.10 in the monoclinic phase region, the samples show strong absorption in the visible light region and we determine a band gap energy of about 2.1 eV, which means that it might also be useful as a visible light irradiation photocatalyst.

AB - A scheelite based structure that could host the solid solution (Na 0.5x Bi 1-0.5x )(Mo x V 1-x )O 4 (0.0 ≤ x ≤ 1.0) was prepared via the solid state reaction method. All the compositions can be sintered well below a temperature of 800 °C. A structural phase transition occurs from the monoclinic scheelite structure to a tetragonal scheelite structure at x = 0.10 at room temperature. This structural transition is related to a displacive ferroelastic-paraelastic phase transition. This phase transition was also confirmed by in situ high temperature XRD and Raman studies, and a room temperature infrared spectra study. The compositions near the phase boundary possessed high dielectric permittivities (>70), and large Qf values (>80000 GHz) with variable temperature coefficients of frequency and capacitance. For example, a temperature stable dielectric made as a composite with compositions of x = 0.05 and x = 0.10 was designed and co-sintered at 720 °C for 2 h to produce a dielectric with a permittivity of ∼77.3, a Qf value between 8000 GHz-10000 GHz, and a temperature coefficient of <±20 ppm/°C at 3.8 GHz over a temperature range of 25-110 °C. This material is a candidate for dielectric resonators and low temperature co-fired ceramics technologies. Near the phase boundary at x = 0.10 in the monoclinic phase region, the samples show strong absorption in the visible light region and we determine a band gap energy of about 2.1 eV, which means that it might also be useful as a visible light irradiation photocatalyst.

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