Phase transitions of antiferroelectric lead zirconate thin films in high electric field

K. Yamakawa, K. Wa Gachigi, S. Trolier-McKinstry, J. P. Dougherty

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Phase transitions in antiferroelectric lead zirconate thin films were studied at room temperature and at 77 K. The lead zirconate films were prepared on Pt coated Si substrates by a reactive magnetron co-sputtering method followed by a rapid thermal annealing process at 700°C. An electric field induced antiferroelectric - ferroelectric phase transition was observed at room temperature with a maximum polarization value of 70 μC/cm2. The average field required to induce the ferroelectric state and that for the reversion to the antiferroelectric state were 294 kV/cm and 179 kV/cm respectively. At 77 K a metastable ferroelectric - ferroelectric transition was observed with a maximum polarization of 58 μC/cm2. These transitions were found to be coincident with those of lead zirconate single crystals.

Original languageEnglish (US)
Pages (from-to)149-155
Number of pages7
JournalFerroelectrics, Letters Section
Volume20
Issue number5-6
DOIs
StatePublished - Jan 1 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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