Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates

P. J. Drummond, A. Wali, M. J. Barth, A. M. DIehm, S. Datta, Jerzy Ruzyllo

Research output: Contribution to journalArticle

Abstract

This letter is concerned with the electrical characterization of 3D fin-shaped silicon used as a channel in novel transistor architectures. This approach adapts photoconductance decay minority carrier measurement methodology to the needs of electrical characterization of fin-shaped semiconductor materials systems. The results obtained indicate as high as threefold decrease in the minority carrier lifetime in the fin-shaped Si as compared with the same active planar Si prior to fins definition (from τ∼45μs to τ∼ 15μs). A cause of this decrease is significant expansion of the effective surface area of the finned samples and the resulting increase in recombination sites related to the structurally disordered sidewalls of the fins formed via etching. Hydrogen termination of the finned surfaces did not provide long-term passivation of the surfaces, which was accomplished only by atomic layer deposition of 3-nm-thick layer of Al2O3.

Original languageEnglish (US)
Article number8025583
Pages (from-to)1513-1515
Number of pages3
JournalIEEE Electron Device Letters
Volume38
Issue number11
DOIs
StatePublished - Nov 1 2017

Fingerprint

Silicon
Substrates
Carrier lifetime
Atomic layer deposition
Passivation
Hydrogen
Etching
Transistors
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Drummond, P. J., Wali, A., Barth, M. J., DIehm, A. M., Datta, S., & Ruzyllo, J. (2017). Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates. IEEE Electron Device Letters, 38(11), 1513-1515. [8025583]. https://doi.org/10.1109/LED.2017.2749205
Drummond, P. J. ; Wali, A. ; Barth, M. J. ; DIehm, A. M. ; Datta, S. ; Ruzyllo, Jerzy. / Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates. In: IEEE Electron Device Letters. 2017 ; Vol. 38, No. 11. pp. 1513-1515.
@article{ccf4ff74a3114c0b9b28cb2880f78b9e,
title = "Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates",
abstract = "This letter is concerned with the electrical characterization of 3D fin-shaped silicon used as a channel in novel transistor architectures. This approach adapts photoconductance decay minority carrier measurement methodology to the needs of electrical characterization of fin-shaped semiconductor materials systems. The results obtained indicate as high as threefold decrease in the minority carrier lifetime in the fin-shaped Si as compared with the same active planar Si prior to fins definition (from τ∼45μs to τ∼ 15μs). A cause of this decrease is significant expansion of the effective surface area of the finned samples and the resulting increase in recombination sites related to the structurally disordered sidewalls of the fins formed via etching. Hydrogen termination of the finned surfaces did not provide long-term passivation of the surfaces, which was accomplished only by atomic layer deposition of 3-nm-thick layer of Al2O3.",
author = "Drummond, {P. J.} and A. Wali and Barth, {M. J.} and DIehm, {A. M.} and S. Datta and Jerzy Ruzyllo",
year = "2017",
month = "11",
day = "1",
doi = "10.1109/LED.2017.2749205",
language = "English (US)",
volume = "38",
pages = "1513--1515",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

Drummond, PJ, Wali, A, Barth, MJ, DIehm, AM, Datta, S & Ruzyllo, J 2017, 'Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates', IEEE Electron Device Letters, vol. 38, no. 11, 8025583, pp. 1513-1515. https://doi.org/10.1109/LED.2017.2749205

Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates. / Drummond, P. J.; Wali, A.; Barth, M. J.; DIehm, A. M.; Datta, S.; Ruzyllo, Jerzy.

In: IEEE Electron Device Letters, Vol. 38, No. 11, 8025583, 01.11.2017, p. 1513-1515.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates

AU - Drummond, P. J.

AU - Wali, A.

AU - Barth, M. J.

AU - DIehm, A. M.

AU - Datta, S.

AU - Ruzyllo, Jerzy

PY - 2017/11/1

Y1 - 2017/11/1

N2 - This letter is concerned with the electrical characterization of 3D fin-shaped silicon used as a channel in novel transistor architectures. This approach adapts photoconductance decay minority carrier measurement methodology to the needs of electrical characterization of fin-shaped semiconductor materials systems. The results obtained indicate as high as threefold decrease in the minority carrier lifetime in the fin-shaped Si as compared with the same active planar Si prior to fins definition (from τ∼45μs to τ∼ 15μs). A cause of this decrease is significant expansion of the effective surface area of the finned samples and the resulting increase in recombination sites related to the structurally disordered sidewalls of the fins formed via etching. Hydrogen termination of the finned surfaces did not provide long-term passivation of the surfaces, which was accomplished only by atomic layer deposition of 3-nm-thick layer of Al2O3.

AB - This letter is concerned with the electrical characterization of 3D fin-shaped silicon used as a channel in novel transistor architectures. This approach adapts photoconductance decay minority carrier measurement methodology to the needs of electrical characterization of fin-shaped semiconductor materials systems. The results obtained indicate as high as threefold decrease in the minority carrier lifetime in the fin-shaped Si as compared with the same active planar Si prior to fins definition (from τ∼45μs to τ∼ 15μs). A cause of this decrease is significant expansion of the effective surface area of the finned samples and the resulting increase in recombination sites related to the structurally disordered sidewalls of the fins formed via etching. Hydrogen termination of the finned surfaces did not provide long-term passivation of the surfaces, which was accomplished only by atomic layer deposition of 3-nm-thick layer of Al2O3.

UR - http://www.scopus.com/inward/record.url?scp=85029176702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029176702&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2749205

DO - 10.1109/LED.2017.2749205

M3 - Article

AN - SCOPUS:85029176702

VL - 38

SP - 1513

EP - 1515

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

M1 - 8025583

ER -

Drummond PJ, Wali A, Barth MJ, DIehm AM, Datta S, Ruzyllo J. Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates. IEEE Electron Device Letters. 2017 Nov 1;38(11):1513-1515. 8025583. https://doi.org/10.1109/LED.2017.2749205