Photoelastic waveguides formed by interfacial reactions on semiconductor heterostructures

L. S. Yu, Z. F. Guan, F. Deng, Q. Z. Liu, S. A. Pappert, P. K.L. Yu, S. S. Lau, Joan Marie Redwing, J. Geisz, T. F. Kuech, H. Kattelus, I. Suni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated and controlled introduction of stable stresses into semiconductor heterostructures using a simple scheme of interfacial reactions between a metal and the substrate. Since the volumetric change for a given reaction is fixed, he induced stress in the structure is independent of the deposition method or the deposition system, as long as the deposited film is fully reacted to form a compounds, The stability of the stress depends on the stability of the compounds.

Original languageEnglish (US)
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages251-256
Number of pages6
ISBN (Print)1558992251
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yu, L. S., Guan, Z. F., Deng, F., Liu, Q. Z., Pappert, S. A., Yu, P. K. L., Lau, S. S., Redwing, J. M., Geisz, J., Kuech, T. F., Kattelus, H., & Suni, I. (1994). Photoelastic waveguides formed by interfacial reactions on semiconductor heterostructures. In Growth, Processing, and Characterization of Semiconductor Heterostructures (pp. 251-256). (Materials Research Society Symposium Proceedings; Vol. 326). Publ by Materials Research Society.