Photoinduced paramagnetic centers in amorphous silicon oxynitride

J. T. Yount, G. T. Kraus, Patrick M. Lenahan, D. T. Krick

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.

Original languageEnglish (US)
Pages (from-to)4969-4972
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number9
DOIs
StatePublished - Dec 1 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Photoinduced paramagnetic centers in amorphous silicon oxynitride'. Together they form a unique fingerprint.

Cite this