Photoinduced paramagnetic centers in amorphous silicon oxynitride

J. T. Yount, G. T. Kraus, Patrick M. Lenahan, D. T. Krick

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.

Original languageEnglish (US)
Pages (from-to)4969-4972
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number9
DOIs
StatePublished - Dec 1 1991

Fingerprint

oxynitrides
amorphous silicon
nitrogen
silicon
nitrogen atoms
point defects
electrons
illumination
vapors
vacuum
defects
room temperature
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yount, J. T. ; Kraus, G. T. ; Lenahan, Patrick M. ; Krick, D. T. / Photoinduced paramagnetic centers in amorphous silicon oxynitride. In: Journal of Applied Physics. 1991 ; Vol. 70, No. 9. pp. 4969-4972.
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Photoinduced paramagnetic centers in amorphous silicon oxynitride. / Yount, J. T.; Kraus, G. T.; Lenahan, Patrick M.; Krick, D. T.

In: Journal of Applied Physics, Vol. 70, No. 9, 01.12.1991, p. 4969-4972.

Research output: Contribution to journalArticle

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