Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process

Amirabbas Pirouz, Seyedehaida Ebrahimi, Farshid Karbassian, Shamsoddin Mohajerzadeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiO 2 nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous SiO 2 layer, using mixture of SF 6, H 2 and O 2 gases. Photoluminescence measurements depicts that nano-textured SiO 2 films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored. It is observed that annealing the porous SiO 2 nanostructures significantly increases the PL intensity. Increasing either the plasma current or hydrogenation time will cause a redshift in the PL spectrum. The morphology of the SiO 2 nanostructures has also been studied using field-emission scanning electron microscopy.

Original languageEnglish (US)
Title of host publication2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages372-375
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of
Duration: Oct 18 2011Oct 21 2011

Other

Other2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
CountryKorea, Republic of
CityJeju
Period10/18/1110/21/11

Fingerprint

Reactive ion etching
Nanostructures
Photoluminescence
Hydrogenation
Annealing
Passivation
Field emission
Etching
Gases
Plasmas
Scanning electron microscopy
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Pirouz, A., Ebrahimi, S., Karbassian, F., & Mohajerzadeh, S. (2011). Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process. In 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 (pp. 372-375). [6155380] https://doi.org/10.1109/NMDC.2011.6155380
Pirouz, Amirabbas ; Ebrahimi, Seyedehaida ; Karbassian, Farshid ; Mohajerzadeh, Shamsoddin. / Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process. 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. pp. 372-375
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Pirouz, A, Ebrahimi, S, Karbassian, F & Mohajerzadeh, S 2011, Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process. in 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011., 6155380, pp. 372-375, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, Jeju, Korea, Republic of, 10/18/11. https://doi.org/10.1109/NMDC.2011.6155380

Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process. / Pirouz, Amirabbas; Ebrahimi, Seyedehaida; Karbassian, Farshid; Mohajerzadeh, Shamsoddin.

2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. p. 372-375 6155380.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - SiO 2 nanostructures have been fabricated by sequential etching/passivation treatment of an amorphous SiO 2 layer, using mixture of SF 6, H 2 and O 2 gases. Photoluminescence measurements depicts that nano-textured SiO 2 films have emission spectra between 530 and 580 nm depending on the details of the sample treatment. The effects of sequence numbers, post-RIE-process hydrogenation treatment, and annealing temperature on the PL characteristics were explored. It is observed that annealing the porous SiO 2 nanostructures significantly increases the PL intensity. Increasing either the plasma current or hydrogenation time will cause a redshift in the PL spectrum. The morphology of the SiO 2 nanostructures has also been studied using field-emission scanning electron microscopy.

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Pirouz A, Ebrahimi S, Karbassian F, Mohajerzadeh S. Photoluminescence from SiO 2 nanostructures prepared by a sequential RIE process. In 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. p. 372-375. 6155380 https://doi.org/10.1109/NMDC.2011.6155380