Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

Kin Fai Mak, Jie Shan

Research output: Contribution to journalReview article

884 Citations (Scopus)

Abstract

Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX 2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.

Original languageEnglish (US)
Pages (from-to)216-226
Number of pages11
JournalNature Photonics
Volume10
Issue number4
DOIs
StatePublished - Apr 1 2016

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Optoelectronic devices
Photonics
Transition metals
Energy gap
transition metals
photonics
Semiconductor materials
Graphite
Electronic properties
Graphene
valleys
Monolayers
graphene
Physics
Optical properties
Infrared radiation
optical properties
physics
electronics
morpholinoanthracycline MX2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Mak, Kin Fai ; Shan, Jie. / Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. In: Nature Photonics. 2016 ; Vol. 10, No. 4. pp. 216-226.
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Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. / Mak, Kin Fai; Shan, Jie.

In: Nature Photonics, Vol. 10, No. 4, 01.04.2016, p. 216-226.

Research output: Contribution to journalReview article

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