TY - JOUR
T1 - Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
AU - Mak, Kin Fai
AU - Shan, Jie
N1 - Funding Information:
We thank the US Department of Energy, Office of Basic Energy Sciences under contracts DESC0013883 (K.F.M.) and DESC0012635, the National Science Foundation under awards DMR-1410407 and 1420451, and the Air Force Office of Scientific Research under grant FA9550-14-1-0268 (J.S.) for support.
Publisher Copyright:
© 2016 Macmillan Publishers Limited. All rights reserved.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX 2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.
AB - Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX 2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.
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U2 - 10.1038/nphoton.2015.282
DO - 10.1038/nphoton.2015.282
M3 - Review article
AN - SCOPUS:84963553271
SN - 1749-4885
VL - 10
SP - 216
EP - 226
JO - Nature Photonics
JF - Nature Photonics
IS - 4
ER -