Photoresists for 193-nm lithography

Robert D. Allen, Gregory M. Wallraff, Donald C. Hofer, Roderick R. Kunz, Susan C. Palmateer, Mark William Horn

Research output: Contribution to specialist publicationArticle

3 Scopus citations

Abstract

Photolithography using 193-nm light appears to be a viable method to extend IC patterning into the next century. In this review, we discuss the current status of resist technology for 193-nm lithography, including single-layer resists (SLR), top-surface imaging (TSI), and multilayer resist (MLR) systems. We will emphasize the design approaches under investigation, the comparison with deep-UV (248 nm) resist design and materials, and speculate on future lithography processes employing 193-nm lithography and resist technology areas of significant opportunity.

Original languageEnglish (US)
Pages21-26
Number of pages6
Volume4
No3
Specialist publicationMicrolithography World
StatePublished - Jun 1995

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Media Technology

Cite this

Allen, R. D., Wallraff, G. M., Hofer, D. C., Kunz, R. R., Palmateer, S. C., & Horn, M. W. (1995). Photoresists for 193-nm lithography. Microlithography World, 4(3), 21-26.