Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors

Ahmedullah Aziz, Swapnadip Ghosh, Suman Datta, Sumeet Kumar Gupta

    Research output: Contribution to journalArticle

    67 Scopus citations

    Abstract

    We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent Landau-Khalatnikov equation solved self-consistently with the transistor equations. The model also considers depolarization fields due to non-ideal contacts. We experimentally characterize FE films to calibrate our model, based on which we analyze the device and circuit implications of FEFETs. We discuss the dependence of the ON current and gate capacitance of FEFETs on the FE thickness and FE material parameters. A ring oscillator analysis shows delay reduction up to 97% at iso-energy for FEFETs compared with MOSFETs at VDD <0.4 V. FEFET-based SRAMs show 47%-68% larger read stability and 50%-57% lower access time, albeit with an increase in the write time.

    Original languageEnglish (US)
    Article number7458805
    Pages (from-to)805-808
    Number of pages4
    JournalIEEE Electron Device Letters
    Volume37
    Issue number6
    DOIs
    StatePublished - Jun 2016

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors'. Together they form a unique fingerprint.

  • Cite this