New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ∼5 × 1013 cm-2·χAl (where χAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Jul 3 1997|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering