Piezoelectric charge densities in AlGaN/GaN HFETs

P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, Joan Marie Redwing

Research output: Contribution to journalArticle

251 Citations (Scopus)

Abstract

New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ∼5 × 1013 cm-2·χAl (where χAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.

Original languageEnglish (US)
Pages (from-to)1230-1231
Number of pages2
JournalElectronics Letters
Volume33
Issue number14
DOIs
StatePublished - Jul 3 1997

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Piezoelectricity
Metallorganic chemical vapor deposition
Charge density
Molecular beam epitaxy
Sapphire
Nitrides
Carrier concentration
Aluminum
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Asbeck, P. M., Yu, E. T., Lau, S. S., Sullivan, G. J., Van Hove, J., & Redwing, J. M. (1997). Piezoelectric charge densities in AlGaN/GaN HFETs. Electronics Letters, 33(14), 1230-1231. https://doi.org/10.1049/el:19970843
Asbeck, P. M. ; Yu, E. T. ; Lau, S. S. ; Sullivan, G. J. ; Van Hove, J. ; Redwing, Joan Marie. / Piezoelectric charge densities in AlGaN/GaN HFETs. In: Electronics Letters. 1997 ; Vol. 33, No. 14. pp. 1230-1231.
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Asbeck, PM, Yu, ET, Lau, SS, Sullivan, GJ, Van Hove, J & Redwing, JM 1997, 'Piezoelectric charge densities in AlGaN/GaN HFETs', Electronics Letters, vol. 33, no. 14, pp. 1230-1231. https://doi.org/10.1049/el:19970843

Piezoelectric charge densities in AlGaN/GaN HFETs. / Asbeck, P. M.; Yu, E. T.; Lau, S. S.; Sullivan, G. J.; Van Hove, J.; Redwing, Joan Marie.

In: Electronics Letters, Vol. 33, No. 14, 03.07.1997, p. 1230-1231.

Research output: Contribution to journalArticle

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AU - Redwing, Joan Marie

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Asbeck PM, Yu ET, Lau SS, Sullivan GJ, Van Hove J, Redwing JM. Piezoelectric charge densities in AlGaN/GaN HFETs. Electronics Letters. 1997 Jul 3;33(14):1230-1231. https://doi.org/10.1049/el:19970843