Piezoelectric charge densities in AlGaN/GaN HFETs

P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, J. Redwing

Research output: Contribution to journalArticlepeer-review

253 Scopus citations

Abstract

New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ∼5 × 1013 cm-2·χAl (where χAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.

Original languageEnglish (US)
Pages (from-to)1230-1231
Number of pages2
JournalElectronics Letters
Volume33
Issue number14
DOIs
StatePublished - Jul 3 1997

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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