Piezoelectric charge densities in AlGaN/GaN HFETs

P. M. Asbeck; E. T. Yu; S. S. Lau; G. J. Sullivan; J. Van Hove; J. Redwing

doi:10.1049/el:19970843

Piezoelectric charge densities in AlGaN/GaN HFETs

P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, J. Redwing

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Abstract

New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ∼5 × 10¹³ cm^-2·χ_Al (where χ_Al is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.

Original language	English (US)
Pages (from-to)	1230-1231
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	14
DOIs	https://doi.org/10.1049/el:19970843
State	Published - Jul 3 1997

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19970843

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abstract = "New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ∼5 × 1013 cm-2·χAl (where χAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.",

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T1 - Piezoelectric charge densities in AlGaN/GaN HFETs

AU - Asbeck, P. M.

AU - Yu, E. T.

AU - Lau, S. S.

AU - Sullivan, G. J.

AU - Van Hove, J.

AU - Redwing, J.

PY - 1997/7/3

Y1 - 1997/7/3

N2 - New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ∼5 × 1013 cm-2·χAl (where χAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.

AB - New estimates of the piezoelectric charge density at (0001) AlGaN/GaN interfaces are provided. Undoped HFET structures grown by both MBE and MOCVD, on sapphire and SiC substrates, exhibit electron densities of ∼5 × 1013 cm-2·χAl (where χAl is the aluminium mol fraction in the AlGaN), which can be attributed to piezoelectric effects. These have a significant influence on the design and behaviour of III-V nitride HFETs.

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EP - 1231

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Piezoelectric charge densities in AlGaN/GaN HFETs

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