Piezoelectric Properties of Ferroelectric Epitaxial Films with High Curie Temperature

Takeshi Yoshimura; Susan E. Trolier-McKinstry

doi:10.1541/ieejsmas.124.117

Piezoelectric Properties of Ferroelectric Epitaxial Films with High Curie Temperature

Takeshi Yoshimura, Susan E. Trolier-McKinstry

Research output: Contribution to journal › Article

1 Scopus citations

Abstract

The ferroelectric and piezoelectric properties of Pb(Yb1/2Nb1/2)O3-PbTiO3 (PYbN-PT) and BiScO3-PbTiO3 (BiScO3-PT) epitaxial films were investigated. The PYbN-PT(50/50) and BiScO3-PT(50/50) films showed a curie temperature near 380 and 450 °C, respectively. For 1 μm-thick PYbN-PT epitaxial films, the highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31,f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. A 3 μm-thick (001) PYbN-PT (50/50) film exhibited a higher e31,f coefficient of -19 C/m2. (001) BiScO3-PT epitaxial films also had well saturated hysteresis loops with a remanent polarization of 36 μC/cm2. The e31,f piezoelectric coefficient was -9 C/m2. The obtained piezoelectric properties of BiScO3-PT films were comparable to that of Pb(Zr,Ti)O3 or relaxor ferroelectric-PbTiO3 films.

Original language	English (US)
Pages (from-to)	117-123
Number of pages	7
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	124
Issue number	4
DOIs	https://doi.org/10.1541/ieejsmas.124.117
State	Published - Jan 1 2004

All Science Journal Classification (ASJC) codes

Mechanical Engineering
Electrical and Electronic Engineering

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Yoshimura, T., & Trolier-McKinstry, S. E. (2004). Piezoelectric Properties of Ferroelectric Epitaxial Films with High Curie Temperature. IEEJ Transactions on Sensors and Micromachines, 124(4), 117-123. https://doi.org/10.1541/ieejsmas.124.117

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abstract = "The ferroelectric and piezoelectric properties of Pb(Yb1/2Nb1/2)O3-PbTiO3 (PYbN-PT) and BiScO3-PbTiO3 (BiScO3-PT) epitaxial films were investigated. The PYbN-PT(50/50) and BiScO3-PT(50/50) films showed a curie temperature near 380 and 450 °C, respectively. For 1 μm-thick PYbN-PT epitaxial films, the highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31,f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. A 3 μm-thick (001) PYbN-PT (50/50) film exhibited a higher e31,f coefficient of -19 C/m2. (001) BiScO3-PT epitaxial films also had well saturated hysteresis loops with a remanent polarization of 36 μC/cm2. The e31,f piezoelectric coefficient was -9 C/m2. The obtained piezoelectric properties of BiScO3-PT films were comparable to that of Pb(Zr,Ti)O3 or relaxor ferroelectric-PbTiO3 films.",

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AB - The ferroelectric and piezoelectric properties of Pb(Yb1/2Nb1/2)O3-PbTiO3 (PYbN-PT) and BiScO3-PbTiO3 (BiScO3-PT) epitaxial films were investigated. The PYbN-PT(50/50) and BiScO3-PT(50/50) films showed a curie temperature near 380 and 450 °C, respectively. For 1 μm-thick PYbN-PT epitaxial films, the highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31,f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. A 3 μm-thick (001) PYbN-PT (50/50) film exhibited a higher e31,f coefficient of -19 C/m2. (001) BiScO3-PT epitaxial films also had well saturated hysteresis loops with a remanent polarization of 36 μC/cm2. The e31,f piezoelectric coefficient was -9 C/m2. The obtained piezoelectric properties of BiScO3-PT films were comparable to that of Pb(Zr,Ti)O3 or relaxor ferroelectric-PbTiO3 films.

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