Piezoelectric RF MEMS switches and phase ShiftersÜ

Ron Polcawich, Daniel Judy, Jeffrey Pulskamp, Susan E. Trolier-McKinstry, Madan Dubey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Piezoelectric thin films were utilized to actuate cantilevers for a radio frequency (RF) microelectromechanical system (MEMS) switches. Using lead zirconate titanate (PZT) thin films, an RF MEMS series switch was designed and fabricated.Ü The switch operates from -25..-C to 100 ..-C with no change in actuation voltage of 9V.Ü The switch isolation is better than -20 dB and the insertion loss (-S21) less than 0.5 dB from DC to 40 GHz.Ü In addition to improvements in switch performance, a 17 GHz, 2-bit reflection phase shifter has been demonstrated using PZT shunt switches operating at 15 V.Ü Each of the 4 phase states are demonstrated with minimal phase error and an average insertion loss of 6.8 dB with a high of 8 dB for the longest phase state (limited by substrate losses highlighted in our previous work).Ü Correcting the substrate loss reduces the insertion loss of the long phase state to less than 2 dB.

Original languageEnglish (US)
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Volume3
DOIs
StatePublished - Dec 1 2008
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: Feb 23 2008Feb 28 2008

Other

Other17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
CountryUnited States
CitySanta Fe, NM
Period2/23/082/28/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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