Piezoelectric thin films for a high frequency ultrasound transducer with integrated electronics

H. Kim, F. Griggio, I. S. Kim, K. Choi, R. L. Tutwiler, T. N. Jackson, S. Trolier-McKinstry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Lead zirconate titanate piezoelectric films were integrated into prototype one-dimensional array transducers. The geometry used for transducer arrays is a xylophone-bar type with a length:width aspect ratio greater than 5:1 in order to isolate the desired resonance modes. The PZT and remaining films in the stack were patterned using ion-beam etching and partially released from the underlying silicon substrate by XeF2 etching. Impedance measurements on the fabricated structures showed resonance frequencies between 3 and 70 MHz for fully and partially released structures depending on the transducer dimensions and vibration modes. In-water transmit and receive functionalities have been demonstrated. A bandwidth on receive of 66 % has been determined for partially released structures.

Original languageEnglish (US)
Title of host publicationIEEE Sensors 2010 Conference, SENSORS 2010
Pages2186-2188
Number of pages3
DOIs
StatePublished - Dec 1 2010
Event9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States
Duration: Nov 1 2010Nov 4 2010

Publication series

NameProceedings of IEEE Sensors

Other

Other9th IEEE Sensors Conference 2010, SENSORS 2010
CountryUnited States
CityWaikoloa, HI
Period11/1/1011/4/10

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, H., Griggio, F., Kim, I. S., Choi, K., Tutwiler, R. L., Jackson, T. N., & Trolier-McKinstry, S. (2010). Piezoelectric thin films for a high frequency ultrasound transducer with integrated electronics. In IEEE Sensors 2010 Conference, SENSORS 2010 (pp. 2186-2188). [5690594] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2010.5690594