Planar tunnel junction fabrication and bandgap engineering on bilayer graphene

Conor Puls, Neal Staley, Ying Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects [1]. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene - the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to "pinch off" electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages205-206
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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