Planar tunnel junction fabrication and bandgap engineering on bilayer graphene

Conor Puls, Neal Staley, Ying Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High electron mobility at room temperature and the ease of two-dimensional patterning are just two of the features of graphene materials that have made them highly interesting for device prospects [1]. The past three years have produced extensive research on both graphene flakes mechanically exfoliated from bulk graphite and on epitaxial graphene - the most promising method of producing wafer-size films by the sublimation of Si from SiC surfaces. A single layer of graphene (1LG) is a semimetal, and the inability to "pinch off" electron transport presents a problem for transistor prospects. However, bilayer graphene (2LG) features a bandgap that is tunable with control of the charge concentration in each layer, making it an ideal candidate for graphene-based electronics.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages205-206
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

Fingerprint

Tunnel junctions
Graphene
Energy gap
Fabrication
Metalloids
Electron mobility
Sublimation
Transistors
Graphite
Electronic equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Puls, C., Staley, N., & Liu, Y. (2009). Planar tunnel junction fabrication and bandgap engineering on bilayer graphene. In 67th Device Research Conference, DRC 2009 (pp. 205-206). [5354953] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354953
Puls, Conor ; Staley, Neal ; Liu, Ying. / Planar tunnel junction fabrication and bandgap engineering on bilayer graphene. 67th Device Research Conference, DRC 2009. 2009. pp. 205-206 (Device Research Conference - Conference Digest, DRC).
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Puls, C, Staley, N & Liu, Y 2009, Planar tunnel junction fabrication and bandgap engineering on bilayer graphene. in 67th Device Research Conference, DRC 2009., 5354953, Device Research Conference - Conference Digest, DRC, pp. 205-206, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 6/22/09. https://doi.org/10.1109/DRC.2009.5354953

Planar tunnel junction fabrication and bandgap engineering on bilayer graphene. / Puls, Conor; Staley, Neal; Liu, Ying.

67th Device Research Conference, DRC 2009. 2009. p. 205-206 5354953 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Puls C, Staley N, Liu Y. Planar tunnel junction fabrication and bandgap engineering on bilayer graphene. In 67th Device Research Conference, DRC 2009. 2009. p. 205-206. 5354953. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354953