Planarizing a-C:H and SiO2 films prepared by bias electron cyclotron resonance plasma deposition

M. W. Horn, S. W. Pang, M. Rothschild

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Abstract

Room-temperature bias electron cyclotron resonance plasma deposition of both carbon- and silicon-based planarization materials has been demonstrated. Planarization layers of amorphous hydrogenated carbon (a-C:H) have been deposited from 1-butene and 1,3-butadiene. Oxide and aluminum features 1-μm deep by 2-μm wide have been planarized to less than 50 nm in height using 1.2-μm-thick a-C:H films. Silicon dioxide layers have been deposited using a mixture of N2O, Ar, and 5% SiH4 diluted in N2. Using films nominally 1.5 μm thick, 800-nm-deep topography can be reduced to less than 50 nm for lines as wide as 3 μm. The planarizing SiO2 layers have been characterized using ellipsometry and Auger electron spectroscopy and found to have a refractive index and stoichiometry comparable to those of thermally grown gate oxide. The time necessary for planarization and the final film thickness are dependent upon the aspect ratio of the features to be planarized and the deposition conditions.

Original languageEnglish (US)
Pages65-71
Number of pages7
Publication statusPublished - Dec 1 1989
EventSixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: Jun 12 1989Jun 13 1989

Other

OtherSixth International VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period6/12/896/13/89

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Horn, M. W., Pang, S. W., & Rothschild, M. (1989). Planarizing a-C:H and SiO2 films prepared by bias electron cyclotron resonance plasma deposition. 65-71. Paper presented at Sixth International VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, .