Plasma-deposited silylation resist for 193 nm lithography

Mark W. Horn, Brian E. Maxwell, Russell B. Goodman, Roderick R. Kunz, Lynn M. Eriksen

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Plasma-enhanced chemical-vapor-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction with hydroxyl groups. After oxygen plasfna pattern transfer, features with resolution below 0.25 μm have been obtained.

Original languageEnglish (US)
Pages (from-to)4207-4211
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number6
DOIs
StatePublished - 1996

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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