Plasma-deposited silylation resist for 193 nm lithography

Mark William Horn, Mordechai Rothschild, Brian E. Maxwell, Russell B. Goodman, Roderick R. Kunz, Lynn M. Eriksen

Research output: Contribution to journalArticlepeer-review


Plasma-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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