Plasma-deposited silylation resist for 193 nm lithography

Mark W. Horn, Mordechai Rothschild, Brian E. Maxwell, Russell B. Goodman, Roderick R. Kunz, Lynn M. Eriksen

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Plasma-deposited carbon-based polymer films are examined for use as an all-dry positive-tone photoresist for 193 nm lithography. These films are designed to crosslink upon exposure to 193 nm radiation, enabling selective silicon uptake via reaction of silylamine gas with hydroxyl in the film. After oxygen plasma pattern transfer, features with resolution below 0.50 μm have been obtained with a 0.35 numerical aperture projection system.

Original languageEnglish (US)
Pages (from-to)179-181
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number2
DOIs
StatePublished - 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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