Plasma enhanced chemical vapor deposition: Modeling and control

Antonios Armaou, Panagiotis D. Christofides

Research output: Contribution to journalConference article

54 Citations (Scopus)

Abstract

This paper focuses on modeling and control of a single-wafer parallel electrode plasma-enhanced chemical vapor deposition process with showerhead arrangement used to deposit a 500 Å amorphous silicon thin film on an 8 cm wafer. Initially, a two-dimensional unsteady-state model is developed for the process that accounts for diffusive and convective mass transfer, bulk and deposition reactions, and nonuniform fluid flow and plasma electron density profiles. The model is solved using finite-difference techniques and the radial nonuniformity of the final film thickness is computed to be almost 19%. Then, a feedback control system is designed and implemented on the process to reduce the film thickness nonuniformity. The control system consists of three spatially distributed proportional integral controllers that use measurements of the deposition rate at several locations across the wafer, to manipulate the inlet concentration of silane in the showerhead and achieve a uniform deposition rate across the wafer. The implementation of the proposed control system is shown to reduce the film thickness radial nonuniformity to 3.8%.

Original languageEnglish (US)
Pages (from-to)3305-3314
Number of pages10
JournalChemical Engineering Science
Volume54
Issue number15-16
DOIs
StatePublished - Jul 1 1999
EventProceedings of the 1998 15th International Symposium on Chemical Reaction Engineering, ISCRE 15 - Newport Beach, CA, USA
Duration: Sep 13 1998Sep 16 1998

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Plasma enhanced chemical vapor deposition
Film thickness
Deposition rates
Control systems
Silanes
Amorphous silicon
Feedback control
Carrier concentration
Flow of fluids
Mass transfer
Deposits
Plasmas
Thin films
Controllers
Electrodes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Industrial and Manufacturing Engineering

Cite this

Armaou, Antonios ; Christofides, Panagiotis D. / Plasma enhanced chemical vapor deposition : Modeling and control. In: Chemical Engineering Science. 1999 ; Vol. 54, No. 15-16. pp. 3305-3314.
@article{99c8a4ee0dbf44d198be9eff42c22d0d,
title = "Plasma enhanced chemical vapor deposition: Modeling and control",
abstract = "This paper focuses on modeling and control of a single-wafer parallel electrode plasma-enhanced chemical vapor deposition process with showerhead arrangement used to deposit a 500 {\AA} amorphous silicon thin film on an 8 cm wafer. Initially, a two-dimensional unsteady-state model is developed for the process that accounts for diffusive and convective mass transfer, bulk and deposition reactions, and nonuniform fluid flow and plasma electron density profiles. The model is solved using finite-difference techniques and the radial nonuniformity of the final film thickness is computed to be almost 19{\%}. Then, a feedback control system is designed and implemented on the process to reduce the film thickness nonuniformity. The control system consists of three spatially distributed proportional integral controllers that use measurements of the deposition rate at several locations across the wafer, to manipulate the inlet concentration of silane in the showerhead and achieve a uniform deposition rate across the wafer. The implementation of the proposed control system is shown to reduce the film thickness radial nonuniformity to 3.8{\%}.",
author = "Antonios Armaou and Christofides, {Panagiotis D.}",
year = "1999",
month = "7",
day = "1",
doi = "10.1016/S0009-2509(98)00458-8",
language = "English (US)",
volume = "54",
pages = "3305--3314",
journal = "Chemical Engineering Science",
issn = "0009-2509",
publisher = "Elsevier BV",
number = "15-16",

}

Plasma enhanced chemical vapor deposition : Modeling and control. / Armaou, Antonios; Christofides, Panagiotis D.

In: Chemical Engineering Science, Vol. 54, No. 15-16, 01.07.1999, p. 3305-3314.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Plasma enhanced chemical vapor deposition

T2 - Modeling and control

AU - Armaou, Antonios

AU - Christofides, Panagiotis D.

PY - 1999/7/1

Y1 - 1999/7/1

N2 - This paper focuses on modeling and control of a single-wafer parallel electrode plasma-enhanced chemical vapor deposition process with showerhead arrangement used to deposit a 500 Å amorphous silicon thin film on an 8 cm wafer. Initially, a two-dimensional unsteady-state model is developed for the process that accounts for diffusive and convective mass transfer, bulk and deposition reactions, and nonuniform fluid flow and plasma electron density profiles. The model is solved using finite-difference techniques and the radial nonuniformity of the final film thickness is computed to be almost 19%. Then, a feedback control system is designed and implemented on the process to reduce the film thickness nonuniformity. The control system consists of three spatially distributed proportional integral controllers that use measurements of the deposition rate at several locations across the wafer, to manipulate the inlet concentration of silane in the showerhead and achieve a uniform deposition rate across the wafer. The implementation of the proposed control system is shown to reduce the film thickness radial nonuniformity to 3.8%.

AB - This paper focuses on modeling and control of a single-wafer parallel electrode plasma-enhanced chemical vapor deposition process with showerhead arrangement used to deposit a 500 Å amorphous silicon thin film on an 8 cm wafer. Initially, a two-dimensional unsteady-state model is developed for the process that accounts for diffusive and convective mass transfer, bulk and deposition reactions, and nonuniform fluid flow and plasma electron density profiles. The model is solved using finite-difference techniques and the radial nonuniformity of the final film thickness is computed to be almost 19%. Then, a feedback control system is designed and implemented on the process to reduce the film thickness nonuniformity. The control system consists of three spatially distributed proportional integral controllers that use measurements of the deposition rate at several locations across the wafer, to manipulate the inlet concentration of silane in the showerhead and achieve a uniform deposition rate across the wafer. The implementation of the proposed control system is shown to reduce the film thickness radial nonuniformity to 3.8%.

UR - http://www.scopus.com/inward/record.url?scp=0033167354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033167354&partnerID=8YFLogxK

U2 - 10.1016/S0009-2509(98)00458-8

DO - 10.1016/S0009-2509(98)00458-8

M3 - Conference article

AN - SCOPUS:0033167354

VL - 54

SP - 3305

EP - 3314

JO - Chemical Engineering Science

JF - Chemical Engineering Science

SN - 0009-2509

IS - 15-16

ER -