Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs

David J. Meyer, Joseph R. Flemish, Joan Marie Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

Several plasma and wet-chemical surface treatments have been tested to determine their effectiveness in improving SiN passivation of the AlGaN surface in HEMT devices. Mitigation of RF dispersion was evidenced by dramatic improvements in pulsed IV data after various plasma surface treatments and SiN passivation were applied to gate-level processed HEMTs. To examine surface chemistry as a result of these treatments, XPS was used to obtain atomic concentrations and bonding information.

Original languageEnglish (US)
Title of host publication2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Pages305-307
Number of pages3
StatePublished - Dec 1 2007
Event22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 - Austin, TX, United States
Duration: May 14 2007May 17 2007

Publication series

Name2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Other

Other22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
CountryUnited States
CityAustin, TX
Period5/14/075/17/07

Fingerprint

High electron mobility transistors
Silicon nitride
Passivation
Surface treatment
Plasmas
Surface chemistry
X ray photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Meyer, D. J., Flemish, J. R., & Redwing, J. M. (2007). Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs. In 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 (pp. 305-307). (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).
Meyer, David J. ; Flemish, Joseph R. ; Redwing, Joan Marie. / Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs. 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. pp. 305-307 (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).
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title = "Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs",
abstract = "Several plasma and wet-chemical surface treatments have been tested to determine their effectiveness in improving SiN passivation of the AlGaN surface in HEMT devices. Mitigation of RF dispersion was evidenced by dramatic improvements in pulsed IV data after various plasma surface treatments and SiN passivation were applied to gate-level processed HEMTs. To examine surface chemistry as a result of these treatments, XPS was used to obtain atomic concentrations and bonding information.",
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Meyer, DJ, Flemish, JR & Redwing, JM 2007, Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs. in 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, pp. 305-307, 22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007, Austin, TX, United States, 5/14/07.

Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs. / Meyer, David J.; Flemish, Joseph R.; Redwing, Joan Marie.

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. p. 305-307 (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Several plasma and wet-chemical surface treatments have been tested to determine their effectiveness in improving SiN passivation of the AlGaN surface in HEMT devices. Mitigation of RF dispersion was evidenced by dramatic improvements in pulsed IV data after various plasma surface treatments and SiN passivation were applied to gate-level processed HEMTs. To examine surface chemistry as a result of these treatments, XPS was used to obtain atomic concentrations and bonding information.

AB - Several plasma and wet-chemical surface treatments have been tested to determine their effectiveness in improving SiN passivation of the AlGaN surface in HEMT devices. Mitigation of RF dispersion was evidenced by dramatic improvements in pulsed IV data after various plasma surface treatments and SiN passivation were applied to gate-level processed HEMTs. To examine surface chemistry as a result of these treatments, XPS was used to obtain atomic concentrations and bonding information.

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Meyer DJ, Flemish JR, Redwing JM. Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs. In 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007. 2007. p. 305-307. (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).