Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts

Rongming Chu, Likum Shen, Nicholas Fichtenbaum, David Brown, Stacia Keller, Umesh K. Mishra

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

It has been found that the reverse leakage current of AlGaN/GaN Schottky contacts can be significantly reduced by a CF4 plasma treatment prior to the Schottky metal evaporation. The data of electrical characterization suggest that the leakage reduction is related to the modification of the semiconductor surface by plasma treatment. The leakage reduction effect was also observed in GaN Schottky contacts. Capacitance-voltage characterization of the GaN Schottky contacts indicates that the Schottky barrier height was slightly increased by the plasma treatment. A two-step surface treatment procedure, consisting of a BCl3 plasma treatment followed by a brief CF4 plasma treatment, has been developed as an efficient approach to reduce the reverse leakage of the Schottky contacts, while avoiding side effects related to the CF4 plasma.

Original languageEnglish (US)
Pages (from-to)297-299
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number4
DOIs
StatePublished - Apr 1 2008

Fingerprint

Plasmas
Leakage currents
Surface treatment
aluminum gallium nitride
Evaporation
Capacitance
Metals
Semiconductor materials
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chu, Rongming ; Shen, Likum ; Fichtenbaum, Nicholas ; Brown, David ; Keller, Stacia ; Mishra, Umesh K. / Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 4. pp. 297-299.
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Chu, R, Shen, L, Fichtenbaum, N, Brown, D, Keller, S & Mishra, UK 2008, 'Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts', IEEE Electron Device Letters, vol. 29, no. 4, pp. 297-299. https://doi.org/10.1109/LED.2008.917814

Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts. / Chu, Rongming; Shen, Likum; Fichtenbaum, Nicholas; Brown, David; Keller, Stacia; Mishra, Umesh K.

In: IEEE Electron Device Letters, Vol. 29, No. 4, 01.04.2008, p. 297-299.

Research output: Contribution to journalArticle

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T1 - Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts

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AU - Fichtenbaum, Nicholas

AU - Brown, David

AU - Keller, Stacia

AU - Mishra, Umesh K.

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AB - It has been found that the reverse leakage current of AlGaN/GaN Schottky contacts can be significantly reduced by a CF4 plasma treatment prior to the Schottky metal evaporation. The data of electrical characterization suggest that the leakage reduction is related to the modification of the semiconductor surface by plasma treatment. The leakage reduction effect was also observed in GaN Schottky contacts. Capacitance-voltage characterization of the GaN Schottky contacts indicates that the Schottky barrier height was slightly increased by the plasma treatment. A two-step surface treatment procedure, consisting of a BCl3 plasma treatment followed by a brief CF4 plasma treatment, has been developed as an efficient approach to reduce the reverse leakage of the Schottky contacts, while avoiding side effects related to the CF4 plasma.

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