Point contact spin spectroscopy of ferromagnetic MnAs epitaxial films

R. P. Panguluri, G. Tsoi, B. Nadgorny, S. H. Chun, N. Samarth, I. I. Mazin

Research output: Contribution to journalArticle

49 Scopus citations

Abstract

We use point contact Andreev reflection spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead, acquired simultaneously with the spin polarization measurements, we demonstrate that all the contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number20
DOIs
StatePublished - Nov 24 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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