Point contact spin spectroscopy of ferromagnetic MnAs epitaxial films

R. P. Panguluri, G. Tsoi, B. Nadgorny, S. H. Chun, Nitin Samarth, I. I. Mazin

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

We use point contact Andreev reflection spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead, acquired simultaneously with the spin polarization measurements, we demonstrate that all the contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number20
DOIs
StatePublished - Nov 24 2003

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Spin polarization
Epitaxial films
Point contacts
Spectroscopy
Ballistics
ballistics
polarization
spectroscopy
Tunnel junctions
Magnetoresistance
Contact resistance
contact resistance
tunnel junctions
Density functional theory
tunnels
Tunnels
Lead
temperature dependence
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Panguluri, R. P. ; Tsoi, G. ; Nadgorny, B. ; Chun, S. H. ; Samarth, Nitin ; Mazin, I. I. / Point contact spin spectroscopy of ferromagnetic MnAs epitaxial films. In: Physical Review B - Condensed Matter and Materials Physics. 2003 ; Vol. 68, No. 20.
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Point contact spin spectroscopy of ferromagnetic MnAs epitaxial films. / Panguluri, R. P.; Tsoi, G.; Nadgorny, B.; Chun, S. H.; Samarth, Nitin; Mazin, I. I.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 68, No. 20, 24.11.2003.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Point contact spin spectroscopy of ferromagnetic MnAs epitaxial films

AU - Panguluri, R. P.

AU - Tsoi, G.

AU - Nadgorny, B.

AU - Chun, S. H.

AU - Samarth, Nitin

AU - Mazin, I. I.

PY - 2003/11/24

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N2 - We use point contact Andreev reflection spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead, acquired simultaneously with the spin polarization measurements, we demonstrate that all the contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.

AB - We use point contact Andreev reflection spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead, acquired simultaneously with the spin polarization measurements, we demonstrate that all the contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.

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