Polarization charge and coercive field dependent performance of negative capacitance FETs

Ahmedullah Aziz, Swapnadip Ghosh, Sumeet K. Gupta, Suman Datta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Scopus citations

    Abstract

    Negative capacitance FETs (NCFETs) [1, 2] have garnered an immense interest due to the possibility of achieving sub-60mV/decade sub-threshold swing at room temperature. NCFETs employ a ferroelectric (FE) material in the gate stack (Fig. 1) and utilize the negative capacitance associated with the FE to generate a voltage step up at the gate terminal, thereby achieving steep switching. In this work, we analyze the dependence of NCFET characteristics and circuit performance on the polarization charge and coercive field of FE-based gate stack through extensive experimental characterization of FE and device-circuit simulations.

    Original languageEnglish (US)
    Title of host publication74th Annual Device Research Conference, DRC 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781509028276
    DOIs
    StatePublished - Aug 22 2016
    Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
    Duration: Jun 19 2016Jun 22 2016

    Publication series

    NameDevice Research Conference - Conference Digest, DRC
    Volume2016-August
    ISSN (Print)1548-3770

    Other

    Other74th Annual Device Research Conference, DRC 2016
    Country/TerritoryUnited States
    CityNewark
    Period6/19/166/22/16

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

    Fingerprint

    Dive into the research topics of 'Polarization charge and coercive field dependent performance of negative capacitance FETs'. Together they form a unique fingerprint.

    Cite this