Polarization fatigue and photoinduced current in (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 films on platinized silicon

Fengang Zheng, Mingrong Shen, Liang Fang, Xinglong Wu, Wenwu Cao

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We report a study on the fatigue behavior of Pb(Zr0.52Ti0.48)TiO3 (PZT) films deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method with single- and double-sided (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers, with an attempt to clarify the role of the top and bottom PLT buffer layers on the fatigue endurance (FE) of the PZT films. It is revealed that the existence of the PLT buffer layer and the level of driving alternating-current electric switching field strongly influence the fatigue properties. In terms of the existence of an asymmetric built-in electric field near the top and bottom interfaces between the film and metal electrode, we explain the observed fatigue properties.

Original languageEnglish (US)
Pages (from-to)803-806
Number of pages4
JournalMaterials Research Bulletin
Volume44
Issue number4
DOIs
StatePublished - Apr 2 2009

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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