Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications

Niharika Thakuria, Atanu K. Saha, Sandeep K. Thirumala, Daniel Schulman, Saptarshi Das, Sumeet K. Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Among several non-volatile memories (NVMs), ferroelectric (FE) based memories show distinct advantages due to electric field ( E )-driven low-power write [1] - [2]. However, there are other concerns in FE based NVMs (such destructive read in FERAMs [3] , gate leakage in FEFETs with floating inter-layer metal (ILM) [5] and traps and depolarization fields in FEFETs without ILM [4] ). To overcome such issues while retaining the useful features of FE, we propose a Polarization-induced Strain coupled TMD FET (PS FET) [ Fig. 1(a) ] that features (a) polarization-based non-volatile bit-storage (b) E-driven write and (c) coupling of piezoelectricity with dynamic bandgap (EG) tuning of 2D Transition Metal Dichalcogenides (TMDs) for read [ Fig. 1(b) ].

Original languageEnglish (US)
Title of host publication2020 Device Research Conference, DRC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728170473
DOIs
StatePublished - Jun 2020
Event2020 Device Research Conference, DRC 2020 - Columbus, United States
Duration: Jun 21 2020Jun 24 2020

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2020-June
ISSN (Print)1548-3770

Conference

Conference2020 Device Research Conference, DRC 2020
Country/TerritoryUnited States
CityColumbus
Period6/21/206/24/20

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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