Polishing and surface characterization of SiC substrates

V. J. Everson, David W. Snyder, V. D. Heydemann

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

Original languageEnglish (US)
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Fingerprint

Polishing
polishing
Surface roughness
Profilometry
surface roughness
Substrates
Surface properties
Etching
Atomic force microscopy
Photons
Scattering
valleys
etching
atomic force microscopy
damage
preparation
evaluation
photons
scattering
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{216c9fdb80cf4ec290a1bc63e366041f,
title = "Polishing and surface characterization of SiC substrates",
abstract = "We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.",
author = "Everson, {V. J.} and Snyder, {David W.} and Heydemann, {V. D.}",
year = "2000",
month = "1",
day = "1",
language = "English (US)",
volume = "338",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

Polishing and surface characterization of SiC substrates. / Everson, V. J.; Snyder, David W.; Heydemann, V. D.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Polishing and surface characterization of SiC substrates

AU - Everson, V. J.

AU - Snyder, David W.

AU - Heydemann, V. D.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

AB - We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

UR - http://www.scopus.com/inward/record.url?scp=17544396432&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17544396432&partnerID=8YFLogxK

M3 - Conference article

VL - 338

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -