Polishing and surface characterization of SiC substrates

V. J. Everson, D. W. Snyder, V. D. Heydemann

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 angstroms and peak-to-valley variations (PV) below 55 angstroms. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.

Original languageEnglish (US)
Pages (from-to)II/-
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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