We developed an implantable thin film transistor temperature sensor (TFT-TS) to measure temperature changes in the brain. These changes are assumed to be associated with cerebral metabolism and neuronal activity. Two prototype TFT-TSs were designed and tested in-vitro: one with 8 diode-connected single-ended sensors, and the other with 4 pairs of differential-ended sensors in an array configuration. The sensor elements are 25∼100 μm in width and 5 μm in length. The TFT-TSs were fabricated based on high-speed ZnO TFT process technology on flexible polyimide substrates (50 μm thick, 500 μm width, 20 mm length). In order to interface external signal electronics, they were directly bonded to a prototype printed circuit board using anisotropic conductive films The prototypes were characterized between 23∼38 °C using a commercial temperature sensor and custom-designed temperature controlled oven. The maximum sensitivity of 40 mV/°C was obtained from the TFT-TS.