TY - GEN
T1 - Polymer substrate temperature sensor array for brain interfaces
AU - Kim, Insoo
AU - Fok, Ho Him R.
AU - Li, Yuanyuan
AU - Jackson, Thomas N.
AU - Gluckman, Bruce J.
PY - 2011
Y1 - 2011
N2 - We developed an implantable thin film transistor temperature sensor (TFT-TS) to measure temperature changes in the brain. These changes are assumed to be associated with cerebral metabolism and neuronal activity. Two prototype TFT-TSs were designed and tested in-vitro: one with 8 diode-connected single-ended sensors, and the other with 4 pairs of differential-ended sensors in an array configuration. The sensor elements are 25∼100 μm in width and 5 μm in length. The TFT-TSs were fabricated based on high-speed ZnO TFT process technology on flexible polyimide substrates (50 μm thick, 500 μm width, 20 mm length). In order to interface external signal electronics, they were directly bonded to a prototype printed circuit board using anisotropic conductive films The prototypes were characterized between 23∼38 °C using a commercial temperature sensor and custom-designed temperature controlled oven. The maximum sensitivity of 40 mV/°C was obtained from the TFT-TS.
AB - We developed an implantable thin film transistor temperature sensor (TFT-TS) to measure temperature changes in the brain. These changes are assumed to be associated with cerebral metabolism and neuronal activity. Two prototype TFT-TSs were designed and tested in-vitro: one with 8 diode-connected single-ended sensors, and the other with 4 pairs of differential-ended sensors in an array configuration. The sensor elements are 25∼100 μm in width and 5 μm in length. The TFT-TSs were fabricated based on high-speed ZnO TFT process technology on flexible polyimide substrates (50 μm thick, 500 μm width, 20 mm length). In order to interface external signal electronics, they were directly bonded to a prototype printed circuit board using anisotropic conductive films The prototypes were characterized between 23∼38 °C using a commercial temperature sensor and custom-designed temperature controlled oven. The maximum sensitivity of 40 mV/°C was obtained from the TFT-TS.
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U2 - 10.1109/IEMBS.2011.6090892
DO - 10.1109/IEMBS.2011.6090892
M3 - Conference contribution
C2 - 22255041
AN - SCOPUS:84862609005
SN - 9781424441211
T3 - Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS
SP - 3286
EP - 3289
BT - 33rd Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS 2011
T2 - 33rd Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS 2011
Y2 - 30 August 2011 through 3 September 2011
ER -