Polysilyne resists for 193-nm excimer laser lithography

R. R. Kunz, P. A. Bianconi, Mark William Horn, R. R. Paladugu, D. C. Shaver, D. A. Smith, C. A. Freed

Research output: Contribution to journalConference article

23 Citations (Scopus)

Abstract

Polyalkylsilynes have been used as resists for 193-nm projection lithography. These resists can be either wet developed using toluene or dry developed using HBr reactive ion etching (RIE). Wet development relies on crosslinking via intermolecular Si-O-Si bond formation to reduce solubility (negative tone) whereas the dry development relies on photooxidation to induce etch selectivity (also negative tone). The sensitivity in either case ranges from 20 to 200 mJ/cm2 and depends on the resist formulation. The best resist compositions are those that contain predominantly small (n-butyl) aliphatic pendant groups rather than large (cyclohexyl, phenyl) pendant groups. Using a 0.33 NA catadioptric lens with a phase mask, equal line-and-space features as small as 0.15 μm have been printed and transferred through 1.0 μm of planarizing layer (aspect ratio >6) using oxygen RIE.

Original languageEnglish (US)
Pages (from-to)218-226
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1466
StatePublished - Jan 1 1991
EventProceedings of the Eighth Conference on Advances in Resist Technology and Processing VIII - San Jose, CA, USA
Duration: Mar 4 1991Mar 5 1991

Fingerprint

Excimer Laser
Reactive ion etching
Excimer lasers
Lithography
Resist
excimer lasers
lithography
etching
Photooxidation
photooxidation
Toluene
crosslinking
Etching
Crosslinking
toluene
aspect ratio
Aspect ratio
Masks
Lenses
ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kunz, R. R., Bianconi, P. A., Horn, M. W., Paladugu, R. R., Shaver, D. C., Smith, D. A., & Freed, C. A. (1991). Polysilyne resists for 193-nm excimer laser lithography. Proceedings of SPIE - The International Society for Optical Engineering, 1466, 218-226.
Kunz, R. R. ; Bianconi, P. A. ; Horn, Mark William ; Paladugu, R. R. ; Shaver, D. C. ; Smith, D. A. ; Freed, C. A. / Polysilyne resists for 193-nm excimer laser lithography. In: Proceedings of SPIE - The International Society for Optical Engineering. 1991 ; Vol. 1466. pp. 218-226.
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Kunz, RR, Bianconi, PA, Horn, MW, Paladugu, RR, Shaver, DC, Smith, DA & Freed, CA 1991, 'Polysilyne resists for 193-nm excimer laser lithography', Proceedings of SPIE - The International Society for Optical Engineering, vol. 1466, pp. 218-226.

Polysilyne resists for 193-nm excimer laser lithography. / Kunz, R. R.; Bianconi, P. A.; Horn, Mark William; Paladugu, R. R.; Shaver, D. C.; Smith, D. A.; Freed, C. A.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 1466, 01.01.1991, p. 218-226.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Polysilyne resists for 193-nm excimer laser lithography

AU - Kunz, R. R.

AU - Bianconi, P. A.

AU - Horn, Mark William

AU - Paladugu, R. R.

AU - Shaver, D. C.

AU - Smith, D. A.

AU - Freed, C. A.

PY - 1991/1/1

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N2 - Polyalkylsilynes have been used as resists for 193-nm projection lithography. These resists can be either wet developed using toluene or dry developed using HBr reactive ion etching (RIE). Wet development relies on crosslinking via intermolecular Si-O-Si bond formation to reduce solubility (negative tone) whereas the dry development relies on photooxidation to induce etch selectivity (also negative tone). The sensitivity in either case ranges from 20 to 200 mJ/cm2 and depends on the resist formulation. The best resist compositions are those that contain predominantly small (n-butyl) aliphatic pendant groups rather than large (cyclohexyl, phenyl) pendant groups. Using a 0.33 NA catadioptric lens with a phase mask, equal line-and-space features as small as 0.15 μm have been printed and transferred through 1.0 μm of planarizing layer (aspect ratio >6) using oxygen RIE.

AB - Polyalkylsilynes have been used as resists for 193-nm projection lithography. These resists can be either wet developed using toluene or dry developed using HBr reactive ion etching (RIE). Wet development relies on crosslinking via intermolecular Si-O-Si bond formation to reduce solubility (negative tone) whereas the dry development relies on photooxidation to induce etch selectivity (also negative tone). The sensitivity in either case ranges from 20 to 200 mJ/cm2 and depends on the resist formulation. The best resist compositions are those that contain predominantly small (n-butyl) aliphatic pendant groups rather than large (cyclohexyl, phenyl) pendant groups. Using a 0.33 NA catadioptric lens with a phase mask, equal line-and-space features as small as 0.15 μm have been printed and transferred through 1.0 μm of planarizing layer (aspect ratio >6) using oxygen RIE.

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Kunz RR, Bianconi PA, Horn MW, Paladugu RR, Shaver DC, Smith DA et al. Polysilyne resists for 193-nm excimer laser lithography. Proceedings of SPIE - The International Society for Optical Engineering. 1991 Jan 1;1466:218-226.