Possibility of a metallic field-effect transistor

Slava V. Rotkin, Karl Hess

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

An electronic switching device, one-dimensional metallic field-effect transistor (MEFET) based on metallic carbon nanotubes was discussed. It was observed that the application of inhomogeneous electric fields created by modulated gates (MG) resulted in the opening of an energy gap and the penetration of weakly screened nanotubes. The device was used to control electron transport in metallic one-dimensional systems by the use of the inhomogeneous electric field created by MG. It was observed that the transport in the armchair single-wall carbon nanotube MEFET was ballistic and the metallic conductance in the ON state was limited by reflections at the contact.

Original languageEnglish (US)
Pages (from-to)3139-3141
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number16
DOIs
StatePublished - Apr 19 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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