Vanadium oxide (VOx) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO x in the resistivity range of 0.1-10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.
|Original language||English (US)|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - Nov 2014|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films