Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films

Yao O. Jin, Adem Ozcelik, Mark W. Horn, Thomas N. Jackson

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Vanadium oxide (VOx) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO x in the resistivity range of 0.1-10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

Original languageEnglish (US)
Article number061501
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume32
Issue number6
DOIs
StatePublished - Nov 2014

Fingerprint

Vanadium
vanadium oxides
Magnetron sputtering
Oxide films
Nanocomposites
magnetron sputtering
nanocomposites
Oxygen
Thin films
Argon
Substrates
thin films
oxygen
vanadium
argon
Processing
Deposition rates
electrical resistivity
Process control
Sputtering

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "Vanadium oxide (VOx) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO x in the resistivity range of 0.1-10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.",
author = "Jin, {Yao O.} and Adem Ozcelik and Horn, {Mark W.} and Jackson, {Thomas N.}",
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T1 - Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films

AU - Jin, Yao O.

AU - Ozcelik, Adem

AU - Horn, Mark W.

AU - Jackson, Thomas N.

PY - 2014/11

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AB - Vanadium oxide (VOx) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VOx film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO x in the resistivity range of 0.1-10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

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