Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz

Christiane Poblenz, Andrea L. Corrion, Felix Recht, Chang Soo Suh, Rongming Chu, Likun Shen, James S. Speck, Umesh K. Mishra

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at Vds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for Vds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.

Original languageEnglish (US)
Pages (from-to)945-947
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number11
DOIs
StatePublished - Nov 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz'. Together they form a unique fingerprint.

Cite this