Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz

Christiane Poblenz, Andrea L. Corrion, Felix Recht, Chang Soo Suh, Rongming Chu, Likun Shen, James S. Speck, Umesh K. Mishra

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at Vds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for Vds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.

Original languageEnglish (US)
Pages (from-to)945-947
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number11
DOIs
StatePublished - Nov 1 2007

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High electron mobility transistors
Ammonia
Molecular beam epitaxy
Substrates
Microwaves
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Poblenz, C., Corrion, A. L., Recht, F., Suh, C. S., Chu, R., Shen, L., ... Mishra, U. K. (2007). Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz. IEEE Electron Device Letters, 28(11), 945-947. https://doi.org/10.1109/LED.2007.907266
Poblenz, Christiane ; Corrion, Andrea L. ; Recht, Felix ; Suh, Chang Soo ; Chu, Rongming ; Shen, Likun ; Speck, James S. ; Mishra, Umesh K. / Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 11. pp. 945-947.
@article{0563d0f09982441d8028ea0eb3b71ad7,
title = "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz",
abstract = "In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63{\%} was measured at Vds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58{\%} was achieved for Vds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.",
author = "Christiane Poblenz and Corrion, {Andrea L.} and Felix Recht and Suh, {Chang Soo} and Rongming Chu and Likun Shen and Speck, {James S.} and Mishra, {Umesh K.}",
year = "2007",
month = "11",
day = "1",
doi = "10.1109/LED.2007.907266",
language = "English (US)",
volume = "28",
pages = "945--947",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

Poblenz, C, Corrion, AL, Recht, F, Suh, CS, Chu, R, Shen, L, Speck, JS & Mishra, UK 2007, 'Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz', IEEE Electron Device Letters, vol. 28, no. 11, pp. 945-947. https://doi.org/10.1109/LED.2007.907266

Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz. / Poblenz, Christiane; Corrion, Andrea L.; Recht, Felix; Suh, Chang Soo; Chu, Rongming; Shen, Likun; Speck, James S.; Mishra, Umesh K.

In: IEEE Electron Device Letters, Vol. 28, No. 11, 01.11.2007, p. 945-947.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz

AU - Poblenz, Christiane

AU - Corrion, Andrea L.

AU - Recht, Felix

AU - Suh, Chang Soo

AU - Chu, Rongming

AU - Shen, Likun

AU - Speck, James S.

AU - Mishra, Umesh K.

PY - 2007/11/1

Y1 - 2007/11/1

N2 - In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at Vds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for Vds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.

AB - In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at Vds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for Vds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.

UR - http://www.scopus.com/inward/record.url?scp=36148941792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36148941792&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.907266

DO - 10.1109/LED.2007.907266

M3 - Article

AN - SCOPUS:36148941792

VL - 28

SP - 945

EP - 947

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

ER -