Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz

Christiane Poblenz, Andrea L. Corrion, Felix Recht, Chang Soo Suh, Rongming Chu, Likun Shen, James S. Speck, Umesh K. Mishra

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Abstract

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at Vds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for Vds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.

Original languageEnglish (US)
Pages (from-to)945-947
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number11
DOIs
StatePublished - Nov 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Poblenz, C., Corrion, A. L., Recht, F., Suh, C. S., Chu, R., Shen, L., Speck, J. S., & Mishra, U. K. (2007). Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz. IEEE Electron Device Letters, 28(11), 945-947. https://doi.org/10.1109/LED.2007.907266