Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L. Swenson, David F. Brown, Stacia Keller, Steven P. Denbaars, James S. Speck, Umesh K. Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages201-202
Number of pages2
DOIs
StatePublished - Dec 1 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: Jun 23 2008Jun 25 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period6/23/086/25/08

Fingerprint

High electron mobility transistors
Molecular beam epitaxy

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Wong, M. H., Pei, Y., Chu, R., Rajan, S., Swenson, B. L., Brown, D. F., ... Mishra, U. K. (2008). Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 201-202). [4800802] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800802
Wong, Man Hoi ; Pei, Yi ; Chu, Rongming ; Rajan, Siddharth ; Swenson, Brian L. ; Brown, David F. ; Keller, Stacia ; Denbaars, Steven P. ; Speck, James S. ; Mishra, Umesh K. / Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. 66th DRC Device Research Conference Digest, DRC 2008. 2008. pp. 201-202 (Device Research Conference - Conference Digest, DRC).
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Wong, MH, Pei, Y, Chu, R, Rajan, S, Swenson, BL, Brown, DF, Keller, S, Denbaars, SP, Speck, JS & Mishra, UK 2008, Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. in 66th DRC Device Research Conference Digest, DRC 2008., 4800802, Device Research Conference - Conference Digest, DRC, pp. 201-202, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800802

Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. / Wong, Man Hoi; Pei, Yi; Chu, Rongming; Rajan, Siddharth; Swenson, Brian L.; Brown, David F.; Keller, Stacia; Denbaars, Steven P.; Speck, James S.; Mishra, Umesh K.

66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 201-202 4800802 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF et al. Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier. In 66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 201-202. 4800802. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800802