PRE-OXIDATION THERMAL ANNEALING OF SILICON.

Jerzy Ruzyllo, Joseph E. Murphy

Research output: Contribution to journalConference article

Abstract

Standard cleaning and etching process performed before each oxidation step leaves the silicon surface covered with a very thin film of spontaneously grown oxide. In this work, thermal annealing, performed in various ambients in the oxidation chamber immediately before the oxidation, was studied to determine its influence on the growth kinetics and some electrical properties of the subsequently grown oxides.

Original languageEnglish (US)
Number of pages1
JournalElectrochemical Society Extended Abstracts
Volume85 -l
StatePublished - Jan 1 1985

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Annealing
Silicon
Oxidation
Oxides
Growth kinetics
Etching
Cleaning
Electric properties
Thin films
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ruzyllo, Jerzy ; Murphy, Joseph E. / PRE-OXIDATION THERMAL ANNEALING OF SILICON. In: Electrochemical Society Extended Abstracts. 1985 ; Vol. 85 -l.
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PRE-OXIDATION THERMAL ANNEALING OF SILICON. / Ruzyllo, Jerzy; Murphy, Joseph E.

In: Electrochemical Society Extended Abstracts, Vol. 85 -l, 01.01.1985.

Research output: Contribution to journalConference article

TY - JOUR

T1 - PRE-OXIDATION THERMAL ANNEALING OF SILICON.

AU - Ruzyllo, Jerzy

AU - Murphy, Joseph E.

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