Standard cleaning and etching process performed before each oxidation step leaves the silicon surface covered with a very thin film of spontaneously grown oxide. In this work, thermal annealing, performed in various ambients in the oxidation chamber immediately before the oxidation, was studied to determine its influence on the growth kinetics and some electrical properties of the subsequently grown oxides.
|Original language||English (US)|
|Number of pages||1|
|Journal||Electrochemical Society Extended Abstracts|
|State||Published - Jan 1 1985|
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