Pre-passivation plasma surface treatment effects on critical device electrical parameters of AlGaN/GaN HEMTs

David J. Meyer, Joseph R. Flemish, Joan Marie Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

This work reports on our investigation of fundamental aspects of surface modification and passivation relating to manufacturability of reliable AlGaN/GaN HEMT devices. We have found that successful mitigation of the RF dispersion in these HEMTs is highly dependent on the type of pre-passivation surface treatment. Surface plasma treatments consisting of C2F6, O2, Cl2, or NH3 used in conjunction with PECVD SiNx allow for the best pulsed I-V characteristics. Less dependent on pre-passivation surface treatment are dc I-V parameters such as interdevice isolation current and gate leakage current, whose magnitude can be altered greatly by varying SiNx film deposition conditions.

Original languageEnglish (US)
Title of host publication2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
Publication statusPublished - Dec 1 2008
Event23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 - Chicago, IL, United States
Duration: Apr 14 2008Apr 17 2008

Publication series

Name2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008

Other

Other23rd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008
CountryUnited States
CityChicago, IL
Period4/14/084/17/08

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Meyer, D. J., Flemish, J. R., & Redwing, J. M. (2008). Pre-passivation plasma surface treatment effects on critical device electrical parameters of AlGaN/GaN HEMTs. In 2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008 (2008 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2008).