Predictive model of SOI buried oxide charging based on statistical mechanics and spin resonance data

J. F. Conley, Patrick M. Lenahan, P. Cole

Research output: Contribution to conferencePaperpeer-review

Abstract

In partially depleted NMOS transistors on SOI, back-channel leakage problems are caused by radiation-induced hole trapping at point defect precursors in the buried oxide. Thus, a predictive model of these hole traps would be quite useful. A model was developed for hole trapping in poly-capped thermally grown oxides which effectively predicts trapped hole densities in Unibond and separation by implantation of oxygen (SIMOX) buried oxides. The model is based on statistical thermodynamics and electron spin resonance (ESR) measurements of defects as E′ centers. More recent ESR measurements have demonstrated that E′ centers also cause charge trapping in SIMOX and Unibond buried oxides.

Original languageEnglish (US)
Pages176-177
Number of pages2
StatePublished - Dec 1 1997
EventProceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
Duration: Oct 6 1997Oct 9 1997

Other

OtherProceedings of the 1997 IEEE International SOI Conference
CityFish Camp, CA, USA
Period10/6/9710/9/97

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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