TY - GEN
T1 - Predictive Modeling of Ferroelectric Tunnel Junctions for Memory and Analog Weight Cell Applications
AU - Xiao, Yi
AU - Deng, Shan
AU - Zhao, Zijian
AU - Narayanan, Vijaykrishnan
AU - Ni, Kai
N1 - Funding Information:
Acknowledgement: This work was supported by U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers program under Award Number DE-SC0021118. REFERENCES [1] T. Mikolajick et a1.. IEEE TED 2020; [2] Dong et aI., J. Appl. Phys. 2018; [3] Chang et aI., IEEE EDL, 2021; [4] Wang et aI., Appl. Phys. Lett. 2014; [5] Wang et aI., J. Phys. D. 2016. [6] Mo et aI., IEDM2018; [7] Hnang et a1.,IEDM2019; [8] He et a1.,J. Computational Electronics 2020; [9] Deng et aI., VLSI Symp. 2020; [10] S. S. Cheema et aI., Nature 2020.
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - Most ferroelectric tunnel junction (FTJ) models lack the predictive capability due to their incomplete capture of the dynamic polarization switching in a multi-domain ferroelectric thin film and the multi-band tunneling transport, limiting their usage in write-Aware design optimizations. In this work, we demonstrate: i) a predictive metal-ferroelectric-insulator-semiconductor (MFIS) FTJ model by incorporating a polarization-switching module and a multi-band tunneling module which is calibrated with device data on both n-Type and p-Type substrates; ii) asymmetric polarization states induced by positive/negative write pulses due to the absence of minority carriers in a two-Terminal MFIS FTJ, which is typically neglected in previous FTJ models; iii) write-Aware design space exploration for memory and analog synapse applications, which is beyond the capability of existing FTJ models.
AB - Most ferroelectric tunnel junction (FTJ) models lack the predictive capability due to their incomplete capture of the dynamic polarization switching in a multi-domain ferroelectric thin film and the multi-band tunneling transport, limiting their usage in write-Aware design optimizations. In this work, we demonstrate: i) a predictive metal-ferroelectric-insulator-semiconductor (MFIS) FTJ model by incorporating a polarization-switching module and a multi-band tunneling module which is calibrated with device data on both n-Type and p-Type substrates; ii) asymmetric polarization states induced by positive/negative write pulses due to the absence of minority carriers in a two-Terminal MFIS FTJ, which is typically neglected in previous FTJ models; iii) write-Aware design space exploration for memory and analog synapse applications, which is beyond the capability of existing FTJ models.
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U2 - 10.1109/IEDM19574.2021.9720678
DO - 10.1109/IEDM19574.2021.9720678
M3 - Conference contribution
AN - SCOPUS:85127003834
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 15.5.1-15.5.4
BT - 2021 IEEE International Electron Devices Meeting, IEDM 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Electron Devices Meeting, IEDM 2021
Y2 - 11 December 2021 through 16 December 2021
ER -