Preliminary investigation of the kinetics of post-oxidation anneal induced E′-precursor formation

J. F. Conley, Patrick M. Lenahan, W. F. McArthur

Research output: Contribution to conferencePaper

Abstract

Detailed knowledge of the underlying defect mechanisms that dominate MOS device reliability is essential for the development of predictive models for semiconductor technology computer-aided-design (TCAD). In this paper, we discuss a preliminary extension our earlier E'-model of hole trap precursor formation in SiO2. Our results, at least qualitatively, show that a kinetic component can be added to extend the thermodynamics-based E' model of oxide hole trapping. Measurements of the growth of E' precursor density and hole trap precursor density vs. post-oxidation-anneal time reveal that both E' and hole trap density approach saturation values and that the approach to these saturation values is more rapid at higher temperatures. The results indicate strongly that a thermodynamics approach to oxide hole trap precursor modeling is appropriate, i.e., the relevant defect densities approach thermodynamic equilibrium or quasi-equilibrium in reasonable times. Since E' centers are suspected of playing a role in time dependent dielectric breakdown, stress induced leakage currents, and other reliability problems, a process dependent predictive knowledge of E' density could potentially provide information about oxide performance and reliability without the need for extensive testing.

Original languageEnglish (US)
Pages62-67
Number of pages6
StatePublished - Dec 1 1998
EventProceedings of the 1998 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA
Duration: Oct 12 1998Oct 15 1998

Other

OtherProceedings of the 1998 IEEE International Integrated Reliability Workshop
CityLake Tahoe, CA, USA
Period10/12/9810/15/98

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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    Conley, J. F., Lenahan, P. M., & McArthur, W. F. (1998). Preliminary investigation of the kinetics of post-oxidation anneal induced E′-precursor formation. 62-67. Paper presented at Proceedings of the 1998 IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA, .