Preliminary investigation of the kinetics of postoxidation rapid thermal anneal induced hole-trap-precursor formation in microelectronic SiO2 films

J. F. Conley, P. M. Lenahan, W. F. McArthur

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Measurements of the growth of E center precursor and hole trap precursor densities versus postoxidation anneal time show that both approach saturation values and that the approach to these values is more rapid at higher temperatures. Our results, at least qualitatively, show that a kinetic component can be added to a predictive thermodynamics-based model of oxide hole trapping. The results also indicate quite strongly that a thermodynamics approach to oxide hole trap precursor modeling is appropriate, i.e., the relevant defect densities approach thermodynamic equilibrium or quasiequilibrium in reasonable times.

Original languageEnglish (US)
Pages (from-to)2188-2190
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number15
DOIs
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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