Preparation and characterization of indium based complex perovskites-Pb(Inl/2Nbl/2)O3 (PIN), Ba(Inl/2Nbl/2)O3 (BIN), and Ba(Inl/2Ta 1/2)O3 (BIT)

F. G. Jones, Clive A. Randall, S. J. Jang, Thomas R. Shrout

Research output: Contribution to journalArticle

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Abstract

The processing of order-disorder perovskites Ba(Int/oNbi n)O3 (BIN), Ba(Ini/2Taj[/2)O3 (BIT), and the lead analogue Pb(In 1/2Nb1/2)O3 (PIN) was investigated with an emphasis on improving and expanding our knowledge of microwave dielectric materials. Both BIN and BIT were shown to be paraelectric perovskites. The processing and annealing of PIN were related to the perovskite and its transformation to pyrochlore. Dielectric and physical characteristics were examined by X-ray diffraction profiles (XRD), scanning electron microscopy (SEM), and dielectric behavior. Attempts to enhance B-site cation order in PIN by thermal annealing were unsuccessful due to a pyrochlore formation.

Original languageEnglish (US)
Pages (from-to)55-62
Number of pages8
JournalFerroelectrics Letters Section
Volume12
Issue number3
DOIs
StatePublished - Sep 1 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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