Preparation and evaluation of damage free surfaces on silicon carbide

W. J. Everson, V. D. Heydemann, R. D. Gamble, D. W. Snyder, G. Goda, M. Skowronski, J. Grim, E. Berkman, J. M. Redwing, J. D. Acord

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A new chemical mechanical polishing process (ACMP) has been developed by the Penn State University Electro-Optics Center for producing damage free surfaces on silicon carbide substrates. This process is applicable to the silicon face of semi-insulating, conductive, 4H, 6H, on-axis and off-axis substrates. The process has been optimized to eliminate polishing induced selectivity and to obtain material removal rates in excess of 150nm/hour. The wafer surfaces and resultant subsurface damage generated by the process were evaluated by white light interferometery, Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and epitaxial layer growth. Residual surface damage induced by the polishing process that propagates into the epitaxial layer has been significantly reduced. Total dislocation densities measured on the ACMP processed wafers are on the order of the densities reported for the best as grown silicon carbide crystals [1]. Characterization of high electron mobility transistors (HEMTs) grown on these substrates indicates that the electrical performance of the substrates met or exceeded current requirements [2].

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
Pages1091-1094
Number of pages4
EditionPART 2
Publication statusPublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Everson, W. J., Heydemann, V. D., Gamble, R. D., Snyder, D. W., Goda, G., Skowronski, M., ... Acord, J. D. (2006). Preparation and evaluation of damage free surfaces on silicon carbide. In Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 ed., pp. 1091-1094). (Materials Science Forum; Vol. 527-529, No. PART 2).