Preparation and structure of PbZrO3 films by krf pulsed laser deposition

Ill Won Kim, Byung Moon Jin, S. Trolier-Mckinstry, J. P. Dougherty

Research output: Contribution to journalArticlepeer-review

Abstract

PbZrO3(PZ) thin films crystallization by rapid thermal annealing (RTA) was studied using Raman-scattering spectroscopy, and the results were compared with those of x-ray diffraction(XRD) result. It was found to be strongly affected the kinetics of subsequent amorphous-perovskite crystallization by RTA temperature. The use of such post anneals allowed to make films of reproducible microstructure and texture [ both (221) and (240)] prepared by RTA. The low frequency (<200 cm-1) Raman peaks for the PZ film disappear and three new Raman peaks occur at the 83 cm-1, 138 cm-1, 273 cm-1 respectively.

Original languageEnglish (US)
Pages (from-to)27-30
Number of pages4
JournalFerroelectrics
Volume196
Issue number1-4
DOIs
StatePublished - 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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