Preparation of piezoelectric PZT thin films by MOCVD for MEMS applications

Ing Shin Chen, Dong Joo Kim, Jon-Paul Maria, Jeffery F. Roeder, Angus I. Kingon

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohedral morphotropic boundary have been deposited on iridium-coated Si substrates by a thermal chemical vapor deposition (CVD) process using flash vaporized metalorganic precursors. Process variables including (A-site)-to-(B-site) ratios in the precursor mix and deposition times have been surveyed. Stoichiometric, perovskite films with nominal Zr/Ti ratios ranging from 40/60 to 60/40 were obtained. Parallel-plate capacitor structures have been fabricated by depositing Pt top electrodes using e-beam evaporation through shadow masks. Ferroelectric hysteresis loops were measured using a standard ferroelectric tester. Remnant polarization values in the range of 20 approx. 30 μC/cm2 were obtained. For films of 0.5 μm or thicker, piezoelectric hysteresis loops were characterized by dual-beam interferometry. Longitudinal piezoelectric coefficients (d33) of 30 approx. 60 pm/V were observed on the films deposited between 550 and 600°C.

Original languageEnglish (US)
Pages (from-to)541-547
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume596
StatePublished - Dec 11 2000
EventFerroelectric Thin Films VIII - Boston, MA, USA
Duration: Nov 29 1999Dec 2 1999

Fingerprint

Metallorganic chemical vapor deposition
microelectromechanical systems
MEMS
metalorganic chemical vapor deposition
Thin films
preparation
Hysteresis loops
thin films
Ferroelectric materials
hysteresis
Iridium
Silicon
iridium
test equipment
parallel plates
Interferometry
Perovskite
flash
Masks
Chemical vapor deposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chen, Ing Shin ; Kim, Dong Joo ; Maria, Jon-Paul ; Roeder, Jeffery F. ; Kingon, Angus I. / Preparation of piezoelectric PZT thin films by MOCVD for MEMS applications. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 596. pp. 541-547.
@article{996bee87084b465ca2747df3b6c9dccf,
title = "Preparation of piezoelectric PZT thin films by MOCVD for MEMS applications",
abstract = "Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohedral morphotropic boundary have been deposited on iridium-coated Si substrates by a thermal chemical vapor deposition (CVD) process using flash vaporized metalorganic precursors. Process variables including (A-site)-to-(B-site) ratios in the precursor mix and deposition times have been surveyed. Stoichiometric, perovskite films with nominal Zr/Ti ratios ranging from 40/60 to 60/40 were obtained. Parallel-plate capacitor structures have been fabricated by depositing Pt top electrodes using e-beam evaporation through shadow masks. Ferroelectric hysteresis loops were measured using a standard ferroelectric tester. Remnant polarization values in the range of 20 approx. 30 μC/cm2 were obtained. For films of 0.5 μm or thicker, piezoelectric hysteresis loops were characterized by dual-beam interferometry. Longitudinal piezoelectric coefficients (d33) of 30 approx. 60 pm/V were observed on the films deposited between 550 and 600°C.",
author = "Chen, {Ing Shin} and Kim, {Dong Joo} and Jon-Paul Maria and Roeder, {Jeffery F.} and Kingon, {Angus I.}",
year = "2000",
month = "12",
day = "11",
language = "English (US)",
volume = "596",
pages = "541--547",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Preparation of piezoelectric PZT thin films by MOCVD for MEMS applications. / Chen, Ing Shin; Kim, Dong Joo; Maria, Jon-Paul; Roeder, Jeffery F.; Kingon, Angus I.

In: Materials Research Society Symposium - Proceedings, Vol. 596, 11.12.2000, p. 541-547.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Preparation of piezoelectric PZT thin films by MOCVD for MEMS applications

AU - Chen, Ing Shin

AU - Kim, Dong Joo

AU - Maria, Jon-Paul

AU - Roeder, Jeffery F.

AU - Kingon, Angus I.

PY - 2000/12/11

Y1 - 2000/12/11

N2 - Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohedral morphotropic boundary have been deposited on iridium-coated Si substrates by a thermal chemical vapor deposition (CVD) process using flash vaporized metalorganic precursors. Process variables including (A-site)-to-(B-site) ratios in the precursor mix and deposition times have been surveyed. Stoichiometric, perovskite films with nominal Zr/Ti ratios ranging from 40/60 to 60/40 were obtained. Parallel-plate capacitor structures have been fabricated by depositing Pt top electrodes using e-beam evaporation through shadow masks. Ferroelectric hysteresis loops were measured using a standard ferroelectric tester. Remnant polarization values in the range of 20 approx. 30 μC/cm2 were obtained. For films of 0.5 μm or thicker, piezoelectric hysteresis loops were characterized by dual-beam interferometry. Longitudinal piezoelectric coefficients (d33) of 30 approx. 60 pm/V were observed on the films deposited between 550 and 600°C.

AB - Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohedral morphotropic boundary have been deposited on iridium-coated Si substrates by a thermal chemical vapor deposition (CVD) process using flash vaporized metalorganic precursors. Process variables including (A-site)-to-(B-site) ratios in the precursor mix and deposition times have been surveyed. Stoichiometric, perovskite films with nominal Zr/Ti ratios ranging from 40/60 to 60/40 were obtained. Parallel-plate capacitor structures have been fabricated by depositing Pt top electrodes using e-beam evaporation through shadow masks. Ferroelectric hysteresis loops were measured using a standard ferroelectric tester. Remnant polarization values in the range of 20 approx. 30 μC/cm2 were obtained. For films of 0.5 μm or thicker, piezoelectric hysteresis loops were characterized by dual-beam interferometry. Longitudinal piezoelectric coefficients (d33) of 30 approx. 60 pm/V were observed on the films deposited between 550 and 600°C.

UR - http://www.scopus.com/inward/record.url?scp=0033680285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033680285&partnerID=8YFLogxK

M3 - Conference article

VL - 596

SP - 541

EP - 547

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -