Abstract
Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohedral morphotropic boundary have been deposited on iridium-coated Si substrates by a thermal chemical vapor deposition (CVD) process using flash vaporized metalorganic precursors. Process variables including (A-site)-to-(B-site) ratios in the precursor mix and deposition times have been surveyed. Stoichiometric, perovskite films with nominal Zr/Ti ratios ranging from 40/60 to 60/40 were obtained. Parallel-plate capacitor structures have been fabricated by depositing Pt top electrodes using e-beam evaporation through shadow masks. Ferroelectric hysteresis loops were measured using a standard ferroelectric tester. Remnant polarization values in the range of 20 approx. 30 μC/cm2 were obtained. For films of 0.5 μm or thicker, piezoelectric hysteresis loops were characterized by dual-beam interferometry. Longitudinal piezoelectric coefficients (d33) of 30 approx. 60 pm/V were observed on the films deposited between 550 and 600°C.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 541-547 |
| Number of pages | 7 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 596 |
| State | Published - Dec 11 2000 |
| Event | Ferroelectric Thin Films VIII - Boston, MA, USA Duration: Nov 29 1999 → Dec 2 1999 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering