Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors

David J. Meyer, Joseph R. Flemish, Joan M. Redwing

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This study has examined the effects that various prepassivation plasma surface treatments had on pulsed and dc I-V characteristics of AlGaNGaN high-electron-mobility transistors. Pulsed I-V current recovery data indicates that C2 F6, N H3, O2, and Cl2 plasma treatments can be used in conjunction with plasma-enhanced chemical vapor deposited silicon nitride to significantly reduce rf dispersion. The different prepassivation surface treatments, however, produced little variation in dc I-V parameters such as gate leakage current, interdevice isolation current, and off-state breakdown voltage as compared to untreated passivated samples.

Original languageEnglish (US)
Article number193505
JournalApplied Physics Letters
Volume92
Issue number19
DOIs
StatePublished - May 27 2008

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high electron mobility transistors
surface treatment
electrical faults
silicon nitrides
isolation
leakage
recovery
vapors

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors. / Meyer, David J.; Flemish, Joseph R.; Redwing, Joan M.

In: Applied Physics Letters, Vol. 92, No. 19, 193505, 27.05.2008.

Research output: Contribution to journalArticle

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