Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors

David J. Meyer, Joseph R. Flemish, Joan M. Redwing

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This study has examined the effects that various prepassivation plasma surface treatments had on pulsed and dc I-V characteristics of AlGaNGaN high-electron-mobility transistors. Pulsed I-V current recovery data indicates that C2 F6, N H3, O2, and Cl2 plasma treatments can be used in conjunction with plasma-enhanced chemical vapor deposited silicon nitride to significantly reduce rf dispersion. The different prepassivation surface treatments, however, produced little variation in dc I-V parameters such as gate leakage current, interdevice isolation current, and off-state breakdown voltage as compared to untreated passivated samples.

Original languageEnglish (US)
Article number193505
JournalApplied Physics Letters
Volume92
Issue number19
DOIs
StatePublished - May 27 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors'. Together they form a unique fingerprint.

  • Cite this